1. Fractal character of the distribution of surface potential irregularities in epitaxial n-GaAs (100)

   • N. A. Torkhov
   • V. G. Bozhkov

   Atomic Structure and Nonelectronic Properties of Semiconductors 06 May 2009 Pages: 551 - 556

2. Redistribution of Al in implanted SiC layers as a result of thermal annealing

   • O. V. Aleksandrov
   • E. V. Kalinina

   Atomic Structure and Nonelectronic Properties of Semiconductors 06 May 2009 Pages: 557 - 562

3. Electronic structure of Zn-substituted germanium clathrates

   • N. A. Borshch
   • N. S. Pereslavtseva
   • S. I. Kurganskii

   Electronic and Optical Properties of Semiconductors 06 May 2009 Pages: 563 - 567

4. Optical and paramagnetic properties of synthetic diamond crystals irradiated with electrons and annealed

   • N. A. Poklonski
   • G. A. Gusakov
   • N. M. Lapchuk

   Electronic and Optical Properties of Semiconductors 06 May 2009 Pages: 568 - 576

5. Persistent photoconductivity in MgZnO alloys

   • A. Y. Polyakov
   • N. B. Smirnov
   • A. I. Belogorokhov

   Electronic and Optical Properties of Semiconductors 06 May 2009 Pages: 577 - 580

6. Photocurrent spectra in parametrical form and their discrete wavelet decomposition for CdZnTe alloys

   • A. V. But
   • V. P. Mygal
   • A. S. Phomin

   Electronic and Optical Properties of Semiconductors 06 May 2009 Pages: 581 - 585

7. Laplace-DLTS method with the regularization parameter chosen from the L curve

   • M. N. Levin
   • A. V. Tatarintzev
   • A. E. Akhkubekov

   Electronic and Optical Properties of Semiconductors 06 May 2009 Pages: 586 - 589

8. Optical properties of the Si-doped GaN/Al₂O₃ films

   • N. S. Zayats
   • P. O. Gentsar
   • I. B. Yanchuk

   Semiconductor Structures, Interfaces, and Surfaces 06 May 2009 Pages: 590 - 593

9. Dislocation electrical conductivity of synthetic diamond films

   • S. N. Samsonenko
   • N. D. Samsonenko

   Semiconductor Structures, Interfaces, and Surfaces 06 May 2009 Pages: 594 - 598

10. Specific features of solid-phase recrystallization of silicon-on-sapphire structures amorphized by oxygen ions

    • P. A. Aleksandrov
    • K. D. Demakov
    • Yu. Yu. Kuznetsov

    Semiconductor Structures, Interfaces, and Surfaces 06 May 2009 Pages: 599 - 601

11. Mechanism of forward current transport in modified-surface Au-CdTe photodiodes

    • V. P. Makhnij
    • Yu. N. Bojko
    • N. V. Skrypnyk

    Semiconductor Structures, Interfaces, and Surfaces 06 May 2009 Pages: 602 - 603

12. Nonlinear thermopower in bipolar semiconductor samples

    • A. Konin

    Semiconductor Structures, Interfaces, and Surfaces 06 May 2009 Pages: 604 - 607

13. Structure and properties of Cd _x Hg_1−x Te-metal contacts

    • V. I. Stafeev

    Semiconductor Structures, Interfaces, and Surfaces 06 May 2009 Pages: 608 - 611

14. Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4H-SiC

    • A. S. Potapov
    • P. A. Ivanov
    • T. P. Samsonova

    Semiconductor Structures, Interfaces, and Surfaces 06 May 2009 Pages: 612 - 616

15. High-frequency conductivity of a thin cylindrical semiconductor wire at arbitrary temperatures

    • I. A. Kuznetsova
    • A. A. Yushkanov
    • R. R. Khadchukaev

    Low-Dimensional Systems 06 May 2009 Pages: 617 - 623

16. Thermoelectric properties of symmetric and asymmetric double quantum well structures

    • I. V. Sur

    Low-Dimensional Systems 06 May 2009 Pages: 624 - 628

17. Width of the excitonic absorption line in Al _x Ga_{1 − x} as alloys

    • M. S. Markosov
    • R. P. Seisyan

    Low-Dimensional Systems 06 May 2009 Pages: 629 - 634

18. Anomalous spin splitting of electrons in type-II InSb quantum dots in InAs

    • Ya. V. Terent’ev
    • O. G. Lyublinskaya
    • S. V. Ivanov

    Low-Dimensional Systems 06 May 2009 Pages: 635 - 639

19. Photoconductivity of organic polymer films doped with porous silicon nanoparticles and ionic polymethine dyes

    • N. A. Davidenko
    • V. A. Skrichevsky
    • E. V. Mokrinskaya

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 06 May 2009 Pages: 640 - 643

20. Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions

    • V. M. Andreev
    • V. V. Evstropov
    • V. P. Khvostikov

    Physics of Semiconductor Devices 06 May 2009 Pages: 644 - 651

21. Mechanisms of negative resistivity and generation of terahertz radiation in a short-channel In_0.53Ga_0.47As/In_0.52Al_0.48As transistor

    • M. L. Orlov
    • L. K. Orlov

    Physics of Semiconductor Devices 06 May 2009 Pages: 652 - 661

22. Emission distribution in GaInAsSb/GaSb flip-chip diodes

    • A. L. Zakgeim
    • N. D. Il’inskaya
    • A. A. Shlenskii

    Physics of Semiconductor Devices 06 May 2009 Pages: 662 - 667

23. Solar cells based on gallium antimonide

    • V. M. Andreev
    • S. V. Sorokina
    • M. Z. Shvarts

    Physics of Semiconductor Devices 06 May 2009 Pages: 668 - 671

24. Light-emitting diodes of “Warm” white luminescence on the basis of p-n heterostructures of the InGaN/AlGaN/GaN type coated with phosphors made of yttrium-gadolinium garnets

    • N. P. Soshchin
    • N. A. Galchina
    • A. E. Yunovich

    Physics of Semiconductor Devices 06 May 2009 Pages: 672 - 676

25. Self-correction of field-effect transistor characteristics in the mode of spontaneous space-charge ion polarization of gate oxide

    • A. G. Zhdan
    • V. G. Naryshkina
    • G. V. Chucheva

    Physics of Semiconductor Devices 06 May 2009 Pages: 677 - 679

26. Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K)

    • L. Ya. Karachinsky
    • I. I. Novikov
    • D. Bimberg

    Physics of Semiconductor Devices 06 May 2009 Pages: 680 - 684

27. Low-temperature production of silicon carbide films of different polytypes

    • A. V. Semenov
    • V. M. Puzikov
    • M. V. Dobrotvorskaya

    Fabrication, Treatment, and Testing of Materials and Structures 06 May 2009 Pages: 685 - 689