1. Semiconductor nanowhiskers: Synthesis, properties, and applications

   • V. G. Dubrovskii
   • G. E. Cirlin
   • V. M. Ustinov

   Review 12 December 2009 Pages: 1539 - 1584

2. Nernst-ettingshausen tensor in Sb₂Te₃ single crystal

   • S. A. Nemov
   • G. L. Tarantasov
   • Yu. V. Granatkina

   Electrical and Optical Properties of Semiconductors 12 December 2009 Pages: 1585 - 1589

3. Interaction of electrons with optical phonons localized in a quantum well

   • J. Požela
   • K. Požela
   • V. S. Mikhrin

   Semiconductor Structures, Interfaces, and Surfaces 12 December 2009 Pages: 1590 - 1596

4. Temperature and current dependences of the lasing spectrum’s width of quantum dot lasers

   • A. V. Savelyev
   • I. I. Novikov
   • A. E. Zhukov

   Physics of Semiconductor Devices 12 December 2009 Pages: 1597 - 1601

5. High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures

   • A. V. Lyutetskiy
   • N. A. Pikhtin
   • I. S. Tarasov

   Physics of Semiconductor Devices 12 December 2009 Pages: 1602 - 1605

6. Obtainment of textured films of aluminum nitride by thermochemical nitridation of sapphire

   • Kh. Sh-o. Kaltaev
   • N. S. Sidel’nikova
   • A. T. Budnikov

   Fabrication, Treatment, and Testing of Materials and Structures 12 December 2009 Pages: 1606 - 1609

7. Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions

   • P. V. Seredin
   • A. V. Glotov
   • I. S. Tarasov

   Fabrication, Treatment, and Testing of Materials and Structures 12 December 2009 Pages: 1610 - 1616

8. GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process

   • V. N. Nevedomskii
   • N. A. Bert
   • B. R. Semyagin

   Fabrication, Treatment, and Testing of Materials and Structures 12 December 2009 Pages: 1617 - 1621