1. The effect of oxygen on the ZnS electronic energy-band structure

   • N. K. Morozova
   • I. A. Karetnikov
   • V. I. Oleshko

   Electronic and Optical Properties of Semiconductors Pages: 485 - 492

2. Magnetic ordering effects in heavily doped GaAs:Fe crystals

   • B. P. Popov
   • V. K. Sobolevskii
   • V. P. Savel’ev

   Electronic and Optical Properties of Semiconductors Pages: 493 - 498

3. The electrical and optical properties of InP irradiated with high integrated fluxes of neutrons

   • V. N. Brudnyi
   • N. G. Kolin
   • V. A. Novikov

   Electronic and Optical Properties of Semiconductors Pages: 499 - 505

4. The conductivity and Hall effect in CdF₂:In and CdF₂:Y

   • I. I. Saidashev
   • E. Yu. Perlin
   • A. S. Shcheulin

   Electronic and Optical Properties of Semiconductors Pages: 506 - 513

5. The conductivity tensor and frequency of electron momentum relaxation in the case of scattering by ionized impurities in a magnetic field: The density matrix method

   • V. E. Kaminskii

   Electronic and Optical Properties of Semiconductors Pages: 514 - 520

6. The extrinsic photoconductivity of chalcogens in Ge_1−x Si_x solid solutions

   • N. B. Radchuk
   • A. Yu. Ushakov

   Electronic and Optical Properties of Semiconductors Pages: 521 - 522

7. Specific features of epitaxial-film formation on porous III–V substrates

   • A. A. Sitnikova
   • A. V. Bobyl
   • V. P. Ulin

   Semiconductor Structures, Interfaces, and Surfaces Pages: 523 - 527

8. p ⁺-Si-n-CdF₂ heterojunctions

   • N. T. Bagraev
   • L. E. Klyachkin
   • A. S. Shcheulin

   Semiconductor Structures, Interfaces, and Surfaces Pages: 528 - 532

9. Injection currents in narrow-gap (Pb_1−x Sn_xTe):In insulators

   • A. N. Akimov
   • V. G. Erkov
   • V. N. Shumsky

   Semiconductor Structures, Interfaces, and Surfaces Pages: 533 - 538

10. The generation-recombination mechanism of charge transport in a thin-film CdS/CdTe heterojunction

    • L. A. Kosyachenko
    • X. Mathew
    • V. M. Sclyarchuk

    Semiconductor Structures, Interfaces, and Surfaces Pages: 539 - 542

11. The resonant tunneling of holes through double-barrier structures with InAs QDs at the center of a GaAs quantum well

    • E. N. Morozova
    • O. N. Makarovskii
    • M. Henini

    Low-Dimensional Systems Pages: 543 - 546

12. Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb

    • G. E. Cirlin
    • V. G. Dubrovskii
    • P. Werner

    Low-Dimensional Systems Pages: 547 - 551

13. The formation of silicon nanocrystals in SiO₂ layers by the implantation of Si ions with intermediate heat treatments

    • G. A. Kachurin
    • V. A. Volodin
    • A. N. Mikhailov

    Low-Dimensional Systems Pages: 552 - 556

14. The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy

    • G. E. Cirlin
    • V. G. Dubrovskii
    • V. M. Ustinov

    Low-Dimensional Systems Pages: 557 - 564

15. The electronic and emissive properties of Au-doped porous silicon

    • V. E. Primachenko
    • Ja. F. Kononets
    • Yu. A. Tsyrkunov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 565 - 571

16. The influence of vacuum annealing temperature on the fundamental absorption edge and structural relaxation of a-SiC:H films

    • A. V. Vasin
    • A. V. Rusavsky
    • V. G. Stepanov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 572 - 576

17. Simulation of the electrical properties of polycrystalline ceramic semiconductors with submicrometer grain sizes

    • I. V. Rozhanskii
    • D. A. Zakheim

    Amorphous, Vitreous, and Porous Semiconductors Pages: 577 - 584

18. Features of the vibrational spectra of diamond-like and polymer-like a-C:H films

    • E. A. Konshina
    • A. I. Vangonen

    Amorphous, Vitreous, and Porous Semiconductors Pages: 585 - 590

19. Electric fatigue in MOS structures due to lowering of the potential barrier during the field ionization of insulator atoms

    • I. S. Savinov

    Physics of Semiconductor Devices Pages: 591 - 593

20. Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs

    • N. I. Bochkareva
    • E. A. Zhirnov
    • Yu. G. Shreter

    Physics of Semiconductor Devices Pages: 594 - 599

21. Effect of uniaxial compression on the photoconversion parameters in a p-GaSe-n-InSe optical contact

    • S. I. Drapak
    • M. O. Vorobets
    • Z. D. Kovalyuk

    Physics of Semiconductor Devices Pages: 600 - 602

22. The influence of gain saturation on the output power of quantum-well semiconductor lasers

    • G. G. Zegrya
    • I. Yu. Solov’ev

    Physics of Semiconductor Devices Pages: 603 - 607