1. III International Conference on Amorphous and Microcrystalline Semiconductors (July 2–4, 2002)

   • E. I. Terukov

   Conference. Review Pages: 741 - 743

2. Electron diffraction investigation of structural diversity of amorphous films of polymorphic TlInS₂

   • D. I. Ismailov
   • M. V. Alieva
   • F. I. Aliev

   Conference. Electronic and Optical Properties of Semiconductors Pages: 744 - 747

3. The influence of a high and low content of Au impurity on the photoluminescence of stoichiometric and nonstoichiometric arsenic sulfide

   • A. A. Babaev
   • I. K. Kamilov
   • I. N. Trapeznikova

   Conference. Electronic and Optical Properties of Semiconductors Pages: 748 - 750

4. Spectra of fundamental optical functions of BeSe

   • V. Val. Sobolev
   • V. V. Sobolev

   Conference. Electronic and Optical Properties of Semiconductors Pages: 751 - 756

5. Optical properties of imperfect In₂Se₃

   • V. Val. Sobolev
   • V. V. Sobolev

   Conference. Electronic and Optical Properties of Semiconductors Pages: 757 - 762

6. Spectral photosensitivity of a-SiGe:H/c-Si heterostructures

   • A. A. Sherchenkov

   Conference. Semiconductor Structures, Interfaces, and Surfaces Pages: 763 - 765

7. Photoinduced conductivity change in erbium-doped amorphous hydrogenated silicon films

   • A. G. Kazanskii
   • H. Mell
   • P. A. Forsh

   Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 766 - 768

8. On studying nanoporous-carbon-based composites by small-angle X-ray scattering

   • É. A. Smorgonskaya

   Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 769 - 774

9. Fullerene single crystals as adsorbents of organic compounds

   • V. I. Berezkin
   • I. V. Viktorovskii
   • L. O. Khoroshko

   Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 775 - 783

10. X-raying studies of the nanoporous carbon structure produced from carbide materials

    • R. N. Kyutt
    • A. M. Danishevskii
    • S. K. Gordeev

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 784 - 788

11. The influence of deposition conditions and alloying on the electronic properties of amorphous selenium

    • S. O. Kasap
    • K. V. Koughia
    • R. E. Johanson

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 789 - 794

12. Synthesis and physical properties of Si(Ge)-Se-Te glasses

    • L. A. Kulakova
    • B. T. Melekh
    • V. Kh. Kudoyarova

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 795 - 799

13. Effect of rare-earth impurities on the photoluminescence of Ge₂S₃ glass

    • A. A. Babaev
    • I. K. Kamilov
    • I. N. Trapeznikova

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 800 - 802

14. Influence of the order-disorder transition in the crystal electron subsystem on the electron density at lattice sites

    • N. P. Seregin
    • T. R. Stepanova
    • N. N. Troitskaya

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 803 - 806

15. Organic materials for photovoltaic and light-emitting devices

    • T. A. Yourre
    • L. I. Rudaya
    • V. V. Shamanin

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 807 - 815

16. Optical and electrical properties of polyamide acid and metal-polymer complex based on terbium

    • É. A. Lebedev
    • M. Ya. Goikhman
    • V. V. Kudryavtsev

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 816 - 817

17. Photosensitivity of new photoconductive polymers based on ruthenium-biquinolyl complexes

    • E. L. Aleksandrova
    • M. Ya. Goikhman
    • V. V. Kudryavtsev

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 818 - 820

18. Optical and photosensitive properties of comb-shaped polyamide-imides

    • E. L. Aleksandrova
    • M. Ya. Goikhman
    • A. V. Yakimanskii

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 821 - 824

19. A study of the effect of oxygen on the intensity of erbium photoluminescence in amorphous SiO_x:(H, Er) films formed by DC magnetron sputtering

    • Yu. K. Undalov
    • E. I. Terukov
    • V. Kh. Kudoyarova

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 825 - 831

20. Splitting of resonant optical modes in Fabry-Perot microcavities

    • V. G. Golubev
    • A. A. Dukin
    • N. A. Feoktistov

    Conference. Physics of Semiconductor Devices Pages: 832 - 837

21. The use of magnesium to dope gallium nitride obtained by molecular-beam epitaxy from activated nitrogen

    • A. A. Vorob’ev
    • V. V. Korablev
    • S. Yu. Karpov

    Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 838 - 842

22. Simulation of growth kinetics of octahedral and platelike oxygen precipitates in silicon

    • V. V. Svetukhin
    • A. G. Grishin
    • O. V. Prikhod’ko

    Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 843 - 845

23. Special features of electron spin resonance in 4H-SiC in the vicinity of the insulator-metal phase transition: I. Effects of spin interaction

    • A. I. Veinger
    • A. G. Zabrodskii
    • E. N. Mokhov

    Electronic and Optical Properties of Semiconductors Pages: 846 - 854

24. Theoretical and experimental study of the effect of InAs growth rate on the properties of QD arrays in InAs/GaAs system

    • V. G. Dubrovskii
    • V. A. Egorov
    • V. M. Ustinov

    Electronic and Optical Properties of Semiconductors Pages: 855 - 860

25. Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode

    • N. A. Cherkashin
    • M. V. Maksimov
    • D. Bimberg

    Low-Dimensional Systems Pages: 861 - 865