Wannier-Stark localization in the natural superlattice of silicon carbide polytypes V. I. Sankin Reviews Pages: 717 - 739
Effect of long-term annealing on accumulation of impurities Yu. A. BykovskiiG. M. VoronkovaS. A. Shcherbakov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 740 - 742
Analysis of the size-distribution function of metallic nanoclusters in a hydrogenated amorphous carbon host V. I. Ivanov-OmskiiA. B. LodyginS. G. Yastrebov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 743 - 746
Modification of the electrical and photoelectric properties of Mg0.15Cd0.85Te solid solutions as a result of pulsed laser irradiation within the transparency range A. BaidullaevaE. F. VengerP. E. Mozol’ Electronic and Optical Properties of Semiconductors Pages: 747 - 750
Titanium, vanadium, and nickel impurities in 3C-SiC: Electronic structure and lattice relaxation effects N. I. MedvedevaÉ. I. YuryevaA. L. Ivanovskii Electronic and Optical Properties of Semiconductors Pages: 751 - 754
Parameters of excitons in monoclinic zinc diarsenide A. I. KozlovS. G. KozlovaV. V. Sobolev Electronic and Optical Properties of Semiconductors Pages: 755 - 757
Structure and properties of silicon carbide grown on porous substrate by vacuum sublimation epitaxy N. S. SavkinaV. V. RatnikovA. A. Volkova Electronic and Optical Properties of Semiconductors Pages: 758 - 762
The effect of composition on the properties and defect structure of the CdS-Ga2S3 solid solution E. F. VengerI. B. ErmolovichV. P. Papusha Electronic and Optical Properties of Semiconductors Pages: 763 - 771
Microwave magnetoresistance of compensated p-Ge:Ga in the region of the insulator-metal phase transition A. I. VeingerA. G. ZabrodskiiT. V. Tisnek Electronic and Optical Properties of Semiconductors Pages: 772 - 781
Thermally stimulated currents in MnIn2S4 single crystals N. N. Niftiev Electronic and Optical Properties of Semiconductors Pages: 782 - 783
E 0 photoreflectance spectra of semiconductor structures with a high density of interface states R. V. Kuz’menkoÉ. P. Domashevskaya Electronic and Optical Properties of Semiconductors Pages: 784 - 788
Switching effect in Si-CdS heterojunctions synthesized in highly nonequilibrium conditions A. P. BelyaevV. P. Rubets Semiconductor Structures, Interfaces, and Surfaces Pages: 789 - 792
Special features of the magnetodiode effect in multivalley semiconductors at low temperatures A. A. AbramovI. N. Gorbatyi Semiconductor Structures, Interfaces, and Surfaces Pages: 793 - 799
Behavior of charge in a buried insulator of silicon-on-insulator structures subjected to electric fields D. V. NikolaevI. V. AntonovaS. A. Smagulova Semiconductor Structures, Interfaces, and Surfaces Pages: 800 - 804
Study of the effect of electron irradiation on a GaSe-SiO2 structure by spectroscopic methods T. D. IbragimovE. A. DzhafarovaZ. B. Safarov Semiconductor Structures, Interfaces, and Surfaces Pages: 805 - 807
Calculation of the low-field mobility of quasi-two-dimensional electrons in a GaAs/Al0.36Ga0.64As superlattice at temperatures in the region of 77 K S. I. Borisenko Low-Dimensional Systems Pages: 808 - 815
GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics V. A. Solov’evA. A. ToropovP. S. Kop’ev Low-Dimensional Systems Pages: 816 - 820
Inhomogeneous broadening of the ground electron level in a quantum dot array V. I. BelyavskiiS. V. Shevtsov Low-Dimensional Systems Pages: 821 - 827
Optically pumped “immersion-lens” infrared light emitting diodes based on narrow-gap III–V semiconductors M. AidaralievN. V. ZotovaG. N. Talalakin Physics of Semiconductor Devices Pages: 828 - 831
Amorphization of the surface region in epitaxial n-GaAs treated with atomic hydrogen N. A. TorkhovI. V. IvoninE. V. Chernikov Physics of Semiconductor Devices Pages: 832 - 836
