1. Investigation of distribution and redistribution of silicon in thin doped gallium-arsenide layers grown by molecular beam epitaxy on substrates with (100), (111)Ga, and (111)As orientations

   • G. B. Galiev
   • V. É. Kaminskii
   • Yu. V. Slepnev

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 741 - 745

2. The magnetoresistance of compensated Ge:As at microwave frequencies in the vicinity of the metal-insulator phase transition

   • A. I. Veinger
   • A. G. Zabrodskii
   • T. V. Tisnek

   Electronic and Optical Properties of Semiconductors Pages: 746 - 754

3. The role of nonequilibrium carriers in linear charge transport (Ohm’s law)

   • Yu. G. Gurevich
   • G. N. Logvinov
   • A. Meriuts

   Electronic and Optical Properties of Semiconductors Pages: 755 - 758

4. Liquid phase reflectivity under conditions of laser-induced silicon melting

   • G. D. Ivlev
   • E. I. Gatskevich

   Electronic and Optical Properties of Semiconductors Pages: 759 - 762

5. Far infrared stimulated and spontaneous radiation in uniaxially deformed zero-gap Hg_1−x Cd_xTe

   • E. F. Venger
   • S. G. Gasan-zade
   • G. A. Shepel’skii

   Electronic and Optical Properties of Semiconductors Pages: 763 - 767

6. Hysteresis of magnetoresistance in neutron-transmutation-doped Ge in the region of hopping transport over the Coulomb-gap states

   • A. G. Andreev
   • S. V. Egorov
   • A. V. Chernyaev

   Electronic and Optical Properties of Semiconductors Pages: 768 - 774

7. The role of impact ionization in the formation of reverse current-voltage characteristics of Al-SiO₂-n-Si tunnel structures

   • M. I. Vexler
   • I. V. Grekhov
   • A. F. Shulekin

   Semiconductor Structures, Interfaces, and Surfaces Pages: 775 - 780

8. Photosensitivity of structures based on ZnSe single crystals

   • G. A. Il’chuk
   • V. Yu. Rud’
   • N. A. Ukrainets

   Semiconductor Structures, Interfaces, and Surfaces Pages: 781 - 785

9. Analysis of charges and surface states at the interfaces of semiconductor-insulator-semiconductor structures

   • L. S. Berman
   • E. I. Belyakova
   • S. C. Kim

   Semiconductor Structures, Interfaces, and Surfaces Pages: 786 - 789

10. Polarization photosensitivity of a-Si:H/c-Si heterojunctions

    • Yu. A. Nikolaev
    • V. Yu. Rud’
    • E. I. Terukov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 790 - 793

11. Photosensitivity of In-SiO₂-Cd_0.28Hg_0.72Te structures with a nontransparent field electrode

    • V. N. Ovsyuk
    • V. V. Vasil’ev
    • Yu. P. Mashukov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 794 - 798

12. The hall effect in Fe submonolayer systems on n-and p-type Si(111)

    • N. G. Galkin
    • D. L. Goroshko
    • S. Ts. Krivoshchapov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 799 - 802

13. Negative differential conductance and the bloch oscillations in the natural superlattice of 8H silicon carbide polytype

    • V. I. Sankin
    • A. A. Lepneva

    Low-Dimensional Systems Pages: 803 - 806

14. Plasma oscillations in two-dimensional semiconductor superstructures

    • S. Yu. Glazov
    • S. V. Kryuchkov

    Low-Dimensional Systems Pages: 807 - 809

    

15. Study of multilayer structures with InAs nanoobjects in a silicon matrix

    • V. N. Petrov
    • N. K. Polyakov
    • Zh. I. Alferov

    Low-Dimensional Systems Pages: 810 - 814

16. Impurity absorption of light in confined systems subjected to a longitudinal magnetic field

    • É. P. Sinyavskii
    • S. M. Sokovnich

    Low-Dimensional Systems Pages: 815 - 816

17. Charge carrier interference in one-dimensional semiconductor rings

    • N. T. Bagraev
    • A. D. Buravlev
    • I. A. Shelykh

    Low-Dimensional Systems Pages: 817 - 824

18. Simulation of photochemical transformations and photodarkening in photoresist films exposed to pulsed vacuum-ultraviolet radiation

    • N. A. Kaliteevskaya
    • R. P. Seisyan

    Amorphous, Vitreous, and Porous Semiconductors Pages: 825 - 828

19. The influence of erbium on electrical and photoelectric properties of amorphous silicon produced by radio-frequency silane decomposition

    • E. I. Terukov
    • M. M. Kazanin
    • A. G. Kazanskii

    Amorphous, Vitreous, and Porous Semiconductors Pages: 829 - 834

20. Fringing field of high-voltage planar p-i-n diodes with a nonuniformly doped guard ring

    • A. S. Kyuregyan

    Physics of Semiconductor Devices Pages: 835 - 843

21. Study of the effect of graded gap epilayers on the performance of Cd_xHg_1−x Te photodiodes

    • V. V. Vasil’ev
    • D. G. Esaev
    • A. O. Suslyakov

    Physics of Semiconductor Devices Pages: 844 - 847

22. InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.0–3.3 µm) for diode laser spectroscopy

    • M. Aidaraliev
    • T. Beyer
    • G. N. Talalakin

    Physics of Semiconductor Devices Pages: 848 - 852

23. Properties of wide-mesastripe InGaAsP/InP lasers

    • E. G. Golikova
    • V. A. Kureshov
    • Zh. I. Alferov

    Physics of Semiconductor Devices Pages: 853 - 856

24. Zhores Ivanovich Alferov (dedicated to his 70th birthday)

    Personalia Pages: 857 - 860