Ultrasound-induced surface hardening of dislocation-free silicon I. V. OstrovskiiL. P. SteblenkoA. B. Nadtochii Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 251 - 254
Photoelectrical and electrical properties of polycrystalline CdxHg1−x Te layers on GaAs substrates V. A. GnatyukE. S. GorodnichenkoA. I. Vlasenko Electronic and Optical Properties of Semiconductors Pages: 255 - 259
Kinetics of attaining the steady state of hot carrier thermoelectric power in a p-n junction with consideration for lattice heating G. GulyamovM. G. DadamirzaevS. R. Boidedaev Electronic and Optical Properties of Semiconductors Pages: 260 - 263
Structure of the metastable centers of the group-III atoms in IV-VI crystals D. E. OnopkoA. I. Ryskin Electronic and Optical Properties of Semiconductors Pages: 264 - 268
A Mössbauer study of a two-electron acceptor impurity of zinc in silicon F. S. NasredinovN. P. SereginS. I. Bondarevskii Electronic and Optical Properties of Semiconductors Pages: 269 - 271
Multivalley splitting of the shallow donor energy spectrum in semiconductors with diamond and sphalerite structures S. M. ZubkovaV. A. IzyumovE. V. Smelyanskaya Electronic and Optical Properties of Semiconductors Pages: 272 - 276
Generation of minority charge carriers at the semiconductor surface during thermally activated ionic depolarization of metal-insulator-semiconductor structures E. I. Gol’dmanA. G. ZhdanG. V. Chucheva Semiconductor Structures, Interfaces, and Surfaces Pages: 277 - 283
Influence of humidity and hydrogen on the charge transport in p-InP diode structures with a palladium contact S. V. SlobodchikovKh. M. Salikhov Semiconductor Structures, Interfaces, and Surfaces Pages: 284 - 290
Study of GaN:O films and related heterostructures S. E. AleksandrovT. A. GavrikovaV. A. Zykov Semiconductor Structures, Interfaces, and Surfaces Pages: 291 - 295
Computer study of phosphorus segregation mechanisms at a SiO2/Si(100) interface V. G. Zavodinskii Semiconductor Structures, Interfaces, and Surfaces Pages: 296 - 299
Influence of electric-field-assisted thermal ionization on the formation of the schottky barrier between metal and amorphous silicon P. N. Krylov Semiconductor Structures, Interfaces, and Surfaces Pages: 300 - 304
The generation-recombination current through a contact of metal with amorphous silicon under the conditions of thermal field ionization in a space-charge region P. N. Krylov Semiconductor Structures, Interfaces, and Surfaces Pages: 305 - 307
Effect of oxygen adsorption on the conductivity of thin SnO2 films V. V. KissineV. V. SysoevV. V. Simakov Semiconductor Structures, Interfaces, and Surfaces Pages: 308 - 311
Special features of spatial redistribution of selenium atoms implanted in silicon A. A. TaskinB. A. ZaitsevE. G. Tishkovskii Semiconductor Structures, Interfaces, and Surfaces Pages: 312 - 318
Photoluminescent and electroluminescent properties of spontaneously forming periodic InGaAsP structures L. S. VavilovaV. A. KapitonovI. S. Tarasov Low-Dimensional Systems Pages: 319 - 322
Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots A. F. Tsatsul’nikovB. V. VolovikZh. I. Alferov Low-Dimensional Systems Pages: 323 - 326
Two-level wave functions of electrons in double-barrier quantum-size structures in an electric field with finite amplitude E. I. GolantA. B. Pashkovskii Low-Dimensional Systems Pages: 327 - 333
Alternating space charge and ambiguity of quantum states in double-barrier structures A. B. Pashkovskii Low-Dimensional Systems Pages: 334 - 343
Absorption features in a-Si/ZrOx nanostructures A. F. KhokhlovI. A. ChuchmaiA. V. Ershov Low-Dimensional Systems Pages: 344 - 347
Transformation of an unordered structural network in amorphous hydrogenated silicon films as a result of doping with boron M. M. MezdroginaA. V. Patsekin Amorphous, Vitreous, and Porous Semiconductors Pages: 348 - 352
Classification of electrical properties of porous silicon S. P. Zimin Amorphous, Vitreous, and Porous Semiconductors Pages: 353 - 357
Special features of relaxation of metastable states induced thermally and by photoexcitation in (a-Si:H):P films I. A. KurovaÉ. V. LarinaN. N. Ormont Amorphous, Vitreous, and Porous Semiconductors Pages: 358 - 362
Amorphous boron films with enhanced electrical conductivity O. A. Golikova Amorphous, Vitreous, and Porous Semiconductors Pages: 363 - 366
Absorption and photoconductivity of boron-compensated μc-Si:H A. G. KazanskiiH. MellP. A. Forsh Amorphous, Vitreous, and Porous Semiconductors Pages: 367 - 369
