Growth characteristics and physical properties of PbTe/BaF2 prepared under nonequilibrium conditions S. V. Plyatsko Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 231 - 234
On the effect of a dopant on the formation of disordered regions in GaAs under irradiation with fast neutrons V. P. Klad’koS. V. Plyatsko Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 235 - 237
On the mechanisms of long-term relaxation of the conductivity in compensated Si〈B,S〉 and Si〈B,Rh〉 as a result of irradiation M. S. YunusovM. KarimovB. L. Oksengendler Electronic and Optical Properties of Semiconductors Pages: 238 - 240
Tin telluride based thermoelectrical alloys V. P. VedeneevS. P. KrivoruchkoE. P. Sabo Electronic and Optical Properties of Semiconductors Pages: 241 - 244
Lock-in-phase analysis of n-GaAs photoreflectance spectra A. V. GanzhaR. V. Kus’menkoS. Hildebrandt Electronic and Optical Properties of Semiconductors Pages: 245 - 249
Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence T. I. VoroninaB. E. DzhurtanovYu. P. Yakovlev Electronic and Optical Properties of Semiconductors Pages: 250 - 256
Low-frequency noise in n-GaN N. V. D’yakonovaM. E. LevinshteinP. Gibart Electronic and Optical Properties of Semiconductors Pages: 257 - 260
Equation of state of an electron gas and theory of the thermal voltage in a quantizing magnetic field B. M. AskerovM. M. MachmudovKh. A. Gasanov Electronic and Optical Properties of Semiconductors Pages: 261 - 262
Diffusion saturation of nondoped hydrated amorphous silicon by tin impurity A. N. KabaldinV. B. NeimashV. S. Shtym Electronic and Optical Properties of Semiconductors Pages: 263 - 266
Role of light fluctuations in the appearance of the bistability of the photocarrier distribution Yu. V. GudymaD. D. Nikirsa Electronic and Optical Properties of Semiconductors Pages: 267 - 269
Laser-modulated epitaxy of lead telluride S. V. Plyatsko Electronic and Optical Properties of Semiconductors Pages: 270 - 273
Optical properties of crystals of the solid solutions (InSb)1−x (CdTe)x V. A. BrodovoiN. G. VyalyiL. M. Knorozok Electronic and Optical Properties of Semiconductors Pages: 274 - 276
Effect of metastable states on the de-excitation of excitons in n-GaAs V. V. KrivolapchukN. K. Poletaev Electronic and Optical Properties of Semiconductors Pages: 277 - 279
Transport phenomena in the solid solution (Pb0.78Sn0.22)0.97In0.03Te in the hopping conduction region S. A. NemovYu. I. RavichT. G. Abaidulina Electronic and Optical Properties of Semiconductors Pages: 280 - 283
Local neutrality and pinning of the chemical potential in III–V solid solutions: Interfaces and radiation effects V. N. BrudnyiS. N. Grinyev Semiconductor Structures, Interfaces, and Surfaces Pages: 284 - 287
Two-and three-dimensional conduction channels at block boundaries in (CdHg)Te mosaic crystals V. A. PogrebnyakD. D. KhalameidaI. M. Rarenko Semiconductor Structures, Interfaces, and Surfaces Pages: 288 - 294
Preparation and photosensitivity of heterostructures based on anodized silicon carbide A. A. LebedevA. A. LebedevV. Yu. Rud’ Semiconductor Structures, Interfaces, and Surfaces Pages: 295 - 296
Properties of periodic α-Si:H/a-SiNx:H structures obtained by nitridization of amorphoussilicon layers D. I. BilenkoO. Ya. BelobrovayaE. I. Khasina Low-Dimensional Systems Pages: 297 - 301
Ionization of impurity centers in a semiconductor quantum superlattice by nonlinear electromagnetic waves S. V. KryuchkovK. A. Popov Low-Dimensional Systems Pages: 302 - 305
Harmonics generation in quantum-size structures in a strong electromagnetic field V. V. KapaevA. E. Tyurin Low-Dimensional Systems Pages: 306 - 311
Effect of the charge state of defects on the light-induced kinetics of the photoconductivity of amorphous hydrated silicon O. A. Golikova Amorphous, Glassy, and Porous Semiconductors Pages: 312 - 315
Effect of ion irradiation of amorphous-silicon films on their crystallization N. V. BakhtinaA. I. MashinE. A. Pitirimova Amorphous, Glassy, and Porous Semiconductors Pages: 316 - 319
Photosensitivity of porous silicon-layered III–VI semiconductors heterostructures A. A. LebedevYu. V. Rud’V. Yu. Rud’ Amorphous, Glassy, and Porous Semiconductors Pages: 320 - 321
Magnetic-resonance spectroscopy of porous quantum-size structures A. I. MamykinV. A. MoshnikovA. Yu. Il’in Amorphous, Glassy, and Porous Semiconductors Pages: 322 - 324
Properties of p +-n structures with a buried layer of radiation-induced defects A. M. IvanovN. B. StrokanV. B. Shuman The Physics of Semiconductor Devices Pages: 325 - 331
Lifetime of nonequilibrium carriers in semiconductors from the standpoint of a collective interaction in the process of radiative recombination S. V. ZaitsevA. M. Georgievskii The Physics of Semiconductor Devices Pages: 332 - 334
Current-voltage characteristics of GaN and AlGaN p-i-n diodes N. I. KuznetsovK. G. Irvine The Physics of Semiconductor Devices Pages: 335 - 338
Spatial distribution of the radiation in the far zone of InAsSb/InAsSbP mesastrip lasers as a function of current T. N. DanilovaA. P. DanilovaYu. P. Yakovlev The Physics of Semiconductor Devices Pages: 339 - 342