1. Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution

   • T. I. Voronina
   • T. S. Lagunova
   • Yu. P. Yakovlev

   OriginalPaper Pages: 763 - 767

2. Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams

   • G. É. Tsyrlin
   • V. N. Petrov
   • N. N. Ledentsov

   OriginalPaper Pages: 768 - 772

3. Two sources of excitation of photoluminescence of porous silicon

   • N. E. Korsunskaya
   • T. V. Torchinskay
   • B. M. Bulakh

   OriginalPaper Pages: 773 - 776

4. Luminescence properties of InAs/GaAs quantum dots prepared by submonolayer migration-stimulated epitaxy

   • G. É. Tsyrlin
   • V. N. Petrov
   • N. N. Ledentsov

   OriginalPaper Pages: 777 - 780

5. Hall effect in quasi-two-dimensional superlattices in nonquantizing magnetic and strong electric fields

   • G. M. Shmelev
   • É. M. Épshtein
   • I. I. Maglevannyi

   OriginalPaper Pages: 781 - 783

6. Nonstationary thermoelectric power in multilayered structures with p-n junctions

   • V. N. Agarev

   OriginalPaper Pages: 784 - 785

7. Si/Si_1−x Ge_x epitaxial layers and superlattices. Growth and structural characteristics

   • F. F. Sizov
   • V. P. Klad’ko
   • V. M. Ogenko

   OriginalPaper Pages: 786 - 788

8. Simple method for reconstructing the doping fine structure in semiconductors from C–V measurements in an electrolytic cell

   • V. I. Shashkin
   • I. R. Karetnikova
   • I. A. Shereshevskii

   OriginalPaper Pages: 789 - 792

9. Effect of pulsed laser irradiation on the optical characteristics and photoconductivity of the solid solutions CdHgTe

   • L. A. Golovan’
   • P. K. Kashkarov
   • V. M. Lakeenkov

   OriginalPaper Pages: 793 - 796

10. Effect of an electric field on the relaxation of photoconductivity in _n-Hg_0.8Cd_0.2Te crystals

    • I. S. Virt

    OriginalPaper Pages: 797 - 799

11. Calculation of the size-quantization levels in strained ZnCdSe/ZnSe quantum wells

    • M. V. Maksimov
    • I. L. Krestnikov
    • S. V. Sorokin

    OriginalPaper Pages: 800 - 803

12. Calculation of the trapping of hot electrons by repulsive centers under the conditions of a needle-type distribution function

    • Kh. Z. Kachlishvili
    • Z. S. Kachlishvili
    • F. G. Chumburidze

    OriginalPaper Pages: 804 - 805

13. Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt

    • A. E. Kunitsyn
    • V. V. Chaldyshev
    • M. G. Mil’vidskii

    OriginalPaper Pages: 806 - 808

14. Dependence of the resonant conductivity of symmetric double-barrier structures on the amplitude of rf field

    • E. I. Golant
    • A. B. Pashkovskii

    OriginalPaper Pages: 809 - 812

15. Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight

    • K. M. Doshchanov

    OriginalPaper Pages: 813 - 814

16. Total external x-ray reflection and infrared spectroscopy study of porous silicon and its aging

    • L. A. Balagurov
    • V. F. Pavlov
    • G. P. Boronina

    OriginalPaper Pages: 815 - 818

17. Calculation of 2p levels for thermal double donors in silicon

    • L. F. Makarenko

    OriginalPaper Pages: 819 - 822

18. Conductivity stimulated by temperature oscillations in dissociated cadmium telluride and cadmium sulfide solid solutions

    • A. P. Belyaev
    • V. P. Rubets
    • I. P. Kalinkin

    OriginalPaper Pages: 823 - 825

19. Intrinsic photoconductivity in chromium disilicide epitaxial thin films

    • N. G. Galkin
    • A. V. Konchenko
    • A. M. Maslov

    OriginalPaper Pages: 826 - 828

20. Enhancement of the photovoltaic effect in a two-dimensionally disordered medium

    • M. V. Éntin

    OriginalPaper Pages: 829 - 830

21. InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3–4 µm

    • T. N. Danilova
    • A. P. Danilova
    • Yu. P. Yakovlev

    OriginalPaper Pages: 831 - 834

22. Electron-probe microanalysis of doped PbTe and Pb_0.8Sn_0.2Te single crystals

    • M. V. Bestaev
    • A. I. Gorelik
    • Yu. M. Tairov

    OriginalPaper Pages: 835 - 837

23. Steady-state lux-ampere characteristics of compensated crystals at various excitation intensities

    • A. A. Lebedev

    OriginalPaper Pages: 838 - 840

24. Evolution of static negative differential conductivity in Ga_1−x Al_xAs as a function of the transverse magnetic field and the composition of the solid solution

    • G. É. Dzamukashvili
    • Z. S. Kachlishvili
    • N. K. Metreveli

    OriginalPaper Pages: 841 - 843

25. Inversion of the conduction type of epitaxial films of PbSnTe solid solutions under the influence of laser irradiation at subthreshold power

    • Yu. B. Grekov
    • T. A. Shlyakhov
    • N. A. Semikolenova

    OriginalPaper Pages: 844 - 846

26. Nature of E _c −0.37 eV centers and the formation of high-resistivity layers in n-type silicon

    • O. V. Naumova
    • L. S. Smirnov
    • V. F. Stas’

    OriginalPaper Pages: 847 - 851

27. Formation of oxygen precipitates in silicon

    • I. V. Antonova
    • V. P. Popov
    • A. Misiuk

    OriginalPaper Pages: 852 - 856

28. Transient photoelectric effect in pure, high-resistivity, highly biased metal-semiconductor and metal-insulator-semiconductor structures

    • B. I. Reznikov

    OriginalPaper Pages: 857 - 863

29. Injection currents in mixed-layer Ga_0.5In_1.5S₃ single crystals

    • I. M. Askerov
    • F. Yu. Asadov

    OriginalPaper Pages: 864 - 865

30. Conversion of red and infrared luminescence centers as a result of electron bombardment and annealing of CdS and CdS:Cu single crystals

    • G. E. Davidyuk
    • N. S. Bogdanyuk
    • A. A. Fedonyuk

    OriginalPaper Pages: 866 - 868

31. Acceptors in Cd_1−x Mn_xTe (x<0.1)

    • A. I. Vlasenko
    • V. N. Babentsov
    • V. L. Shlyakhovyi

    OriginalPaper Pages: 869 - 871

32. Energy spectrum of n-type Pb_1−x Sn_xTe (x=0.22) bombarded by neutrons

    • E. P. Skipetrov
    • A. N. Nekrasova
    • A. V. Ryazanov

    OriginalPaper Pages: 872 - 874