Photoelectric amplification of variband photoresistors V. G. SavitskiiB. S. Sokolovskii OriginalPaper Pages: 1 - 3
Relaxation spectra of photoluminescence from porous silicon obtained by chemical etching of laser-modified silicon L. L. FedorenkoA. D. SardarlyS. V. Baranets OriginalPaper Pages: 4 - 7
Electrical properties of ZnSe/GaAs (100) heterostructures grown by photostimulated vapor-phase epitaxy A. V. Kovalenko OriginalPaper Pages: 8 - 10
Electrical and photoelectric properties of a Pd-p 0-Si-p-Si structure with a disordered intermediate p 0 layer S. V. SlobodchikovKh. M. SalikhovA. I. Yazlyeva OriginalPaper Pages: 11 - 14
Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates A. E. ZhukovA. Yu. EgorovP. S. Kop’ev OriginalPaper Pages: 15 - 18
Carrier accumulation and strong electrode sheath fields in illuminated, high-resistivity MISIM structures B. I. ReznikovG. V. Tsarenkov OriginalPaper Pages: 19 - 25
Growth of ZnSe films on GaAs(100) substrate by x-ray-enhanced, vapor-phase epitaxy A. V. Kovalenko OriginalPaper Pages: 26 - 28
Photoelectric and photomagnetic properties of the gapless semiconductor CdxHg1−x Te in the infrared and millimeter spectral regions when an energy gap is opened S. G. Gasan-zadeE. A. Sal’kovG. A. Shepel’skii OriginalPaper Pages: 29 - 35
Ion transfer processes in an insulating layer containing traps E. I. Gol’dman OriginalPaper Pages: 36 - 40
Charge instability effects in the system silicon carbide-insulator V. A. Karachinov OriginalPaper Pages: 44 - 45
Optical properties of quasiperiodic and aperiodic PbS-CdS superlattices S. F. MusikhinV. I. Il’inT. V. Yudintseva OriginalPaper Pages: 46 - 50
Waveguide properties of gallium, aluminum, and indium nitride heterostructures V. E. BugrovA. S. Zubrilov OriginalPaper Pages: 51 - 54
Photoluminescence of InSb quantum dots in GaAs and GaSb matrices A. F. Tsatsul’nikovN. N. LedentsovD. Bimberg OriginalPaper Pages: 55 - 57
Investigation of the structure of the edge of the valence band of Cd1−x MnxS crystals on the basis of magnetooptical measurements V. G. AbramishviliA. V. KomarovYu. G. Semenov OriginalPaper Pages: 58 - 62
Analysis of the temporal instability of the parameters of an insulator/III–V compound by the isothermal capacitance relaxation method L. S. Berman OriginalPaper Pages: 63 - 66
Depth distribution of deep-level centers in silicon dioxide near an interface with indium phosphide L. S. Berman OriginalPaper Pages: 67 - 68
Monte Carlo simulation of the low-temperature mobility of two-dimensional electrons in a silicon inversion layer V. M. BorzdovT. A. Petrovich OriginalPaper Pages: 72 - 75
Study of PbTe photodiodes on a buffer sublayer of porous silicon L. V. BelyakovI. B. ZakharovaS. A. Rykov OriginalPaper Pages: 76 - 77
High-frequency capacitance-voltage characteristic of GaAs-based, thin-film structures N. B. GorevT. V. MakarovaV. I. Éppel’ OriginalPaper Pages: 78 - 80
Quasiballistic model of current transport and formation of the S-type current-voltage characteristic in the lightly doped, double-barrier heterostructure AlxGa1−x As-GaAs-AlAs A. M. BelyantsevYu. Yu. Romanova OriginalPaper Pages: 81 - 83
Thermal stability of vertically coupled InAs-GaAs quantum dot arrays A. E. ZhukovA. Yu. EgorovD. Bimberg OriginalPaper Pages: 84 - 87
Modulation of a quantum well potential by a quantum-dot array A. F. Tsatsul’nikovA. Yu. EgorovD. Bimberg OriginalPaper Pages: 88 - 91
Cathodoluminescence of p-n-p microstructures in CuInSe2 crystals S. G. KonnikovG. A. MedvedkinS. A. Solov’ev OriginalPaper Pages: 92 - 96
