Volume 18, Issue 7

Search all Journal of Materials Science: Materials in Electronics articles

July 2007

Special Issue: Papers Presented at the Second International Workshop: Coordination Action on Defects Relevant to Engineering Silicon-Based Devices (Crete, September 2006) Guest Editor: Jan Evans-Freeman

22 articles in this issue

Editorial
Jan Evans-Freeman
Editorial 24 February 2007 Pages: 681 - 681
Local vibrational modes of N₂−O_n defects in Cz-Silicon
Naomi Fujita
Robert Jones
Patrick R. Briddon
OriginalPaper 20 January 2007 Pages: 683 - 687
Characterization of intersubband devices combining a nonequilibrium many body theory with transmission spectroscopy experiments
M. F. Pereira Jr
R. Nelander
R. J. Airey
OriginalPaper 21 December 2006 Pages: 689 - 694
The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si
P. G. Coleman
R. E. Harding
J. Wong-Leung
OriginalPaper 12 December 2006 Pages: 695 - 700
Formation rate of vacancy–oxygen complexes in heat-treated Czochralski grown silicon under gamma-irradiation
V. V. Emtsev
V. V. Emtsev Jr
G. A. Oganesyan
OriginalPaper 26 January 2007 Pages: 701 - 704
A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon
Y. L. Huang
E. Simoen
P. Clauws
OriginalPaper 21 December 2006 Pages: 705 - 710
Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures
V. V. Emtsev
P. Ehrhart
K. V. Emtsev
OriginalPaper 09 February 2007 Pages: 711 - 714
Doped silicon under uniaxial tensile strain investigated by PAC
Nicole Santen
Reiner Vianden
OriginalPaper 21 December 2006 Pages: 715 - 719
Infrared absorption spectra of defects in carbon doped neutron-irradiated Si
C. A. Londos
G. D. Antonaras
A. Misiuk
OriginalPaper 05 January 2007 Pages: 721 - 728
Ab initio investigation of charge transfer technique for control of Schottky contacts in CNTs
D. Casterman
M. M. De Souza
OriginalPaper 01 February 2007 Pages: 729 - 734
Analysis of the (100)Si/LaAlO₃ structure by electron spin resonance: nature of the interface
K. Clémer
A. Stesmans
D. G. Schlom
OriginalPaper 03 January 2007 Pages: 735 - 741
EPR characterization of defects in m-HfO₂
Sandra Wright
R. C. Barklie
OriginalPaper 15 February 2007 Pages: 743 - 746
High boron incorporation in selective epitaxial growth of SiGe layers
R. Ghandi
M. Kolahdouz
H. H. Radamson
OriginalPaper 27 February 2007 Pages: 747 - 751
The response of open-volume defects in Si_0.92Ge_0.08 to annealing in nitrogen or oxygen ambient
D. A. Abdulmalik
P. G. Coleman
A. P. Knights
OriginalPaper 21 December 2006 Pages: 753 - 757
Iron-aluminium pair reconfiguration processes in SiGe alloys
P. Kruszewski
A. Mesli
A. R. Peaker
OriginalPaper 13 February 2007 Pages: 759 - 762
Atomic scale simulations of donor–vacancy pairs in germanium
A. Chroneos
R. W. Grimes
C. Tsamis
OriginalPaper 06 February 2007 Pages: 763 - 768
Early stage donor-vacancy clusters in germanium
José Coutinho
Vitor J. B. Torres
Patrick R. Briddon
OriginalPaper 07 December 2006 Pages: 769 - 773
Ab initio investigation of boron diffusion paths in germanium
C. Janke
R. Jones
P. R. Briddon
OriginalPaper 01 December 2006 Pages: 775 - 780
Oxygen defects in irradiated germanium
A. Carvalho
R. Jones
P. R. Briddon
OriginalPaper 15 December 2006 Pages: 781 - 786
Germanium content dependence of the leakage current of recessed SiGe source/drain junctions
Eddy Roger Simoen
Mireia Bargallo Gonzalez
Cor Claeys
OriginalPaper 23 January 2007 Pages: 787 - 791
Infrared absorption and slow positron investigation of hydrogen plasma induced platelets in crystalline germanium
J. Lauwaert
J. De Baerdemaeker
P. Clauws
OriginalPaper 03 January 2007 Pages: 793 - 797
Lifetime and leakage current considerations in metal-doped germanium
E. Simoen
C. Claeys
A. Theuwis
OriginalPaper 30 January 2007 Pages: 799 - 804

Volume 18, Issue 7

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