Abstract
GaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This minimizes optical losses and increases the damage threshold by ≥20%, hardness by 33%, and the efficiency of femtosecond Ti:Sa laser frequency conversion into the 8.8–24 μm and 0.2–3 THz ranges by ≥50%.
Similar content being viewed by others
References
Abdullaev, G.B., Kulevskii, L.A., Prokhorov, A.M., Savel’ev, A.D., Salaev, E.Yu., and Smirnov, V.V., JETP Lett., 1972, vol. 16, no. 3, pp. 90–92.
Dmitriev, V.G., Gurzadyan, G.G., and Nikogosyan, D.N., Handbook of Nonlinear Optical Crystals, Berlin: Springer, 1997, pp. 166–169.
Wei Shi and Yujie J. Ding, Appl. Phys. Lett., 2004, vol. 84, no. 10, pp. 1635–1637.
Ding, Y.J. and Shi, W., Laser Phys., 2006, vol. 16, pp. 562–570.
Fernelius, N.C., Prog. Crystal Growth Charact., 1994, vol. 28, pp. 275–353.
Guo, J., Li, D.-J., Xie, J.-J., et al., Laser Phys. Lett., 2014, vol. 11, no. 5, p. 055401(1–6).
Feng, Z.-S., Kang, Z.-H., Li, X.-M., et al., AIP Adv., 2014, vol. 4, no. 3, p. 037104(1–6).
Zhang, H.-Zh., Kang, Zh.-H., Jiang, Yu., et al, Opt. Express, 2008, vol. 16, no. 13, pp. 9951–9957.
Guo, J., Kang, Z.-H., Feng, Z.-S., et al., Appl. Phys. B: Lasers Opt., 2012, vol. 108, no. 3, pp. 545–552.
Ku, S.-A., Chu, W.-C., Luo, C.-W., et al., Opt. Express, 2012, vol. 20, no. 5, pp. 5029–5037.
Chu, W.-C., Ku, S.-A., Wang, H.J., et al., Opt. Lett., 2012, vol. 37, no. 5, pp. 945–947.
Huang, J., Tong, J., Ouyang, C., et al., Appl. Phys. Lett., 2013, vol. 103, p. 81104.
Guo, J., Li, D.-J., Xie, J.-J., et al., Laser Phys. Lett., 2014, vol. 11, no. 5, p. 055401(1–6).
Guo, J., Xie, J.-J., Zhang, L.-M., et al., Cryst. Eng. Commun., 2013, vol. 15, pp. 6323–6328.
Feng, Z.-S., Guo, J., Xie, J.-J., et al., Opt. Commun., 2014, vol. 318, pp. 205–211.
Zhang, Y.-F., Wang, R., Kang, Z.-H., et al., Opt. Commun., 2011, vol. 284, pp. 1677–1681.
Luo, Z.-W., Gu, X.-A., Zhu, W.-C., et al., Opt. Precision Eng., 2011, vol. 19, no. 2, pp. 354–359.
Andreev, Yu.M., Vaitulevich, E.A., Kokh, K.A., et al., Izv. Vyssh. Uchebn. Zaved., Fiz., 2013, vol. 56, no. 11, pp. 37–44.
Sarkisov, S.Yu., Nazarov, M.M., Shkurinov, A.P., and Tolbanov, O.P., Proc. 34th Int. Ñonf. on Infrared, Millimeter and Terahertz Wave (IRMMW-THz-2009), Busan, 2009.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © D.M. Lubenko, V.F. Losev, Yu.M. Andreev, G.V. Lanskij, V.A. Svetlichnyj, 2015, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2015, Vol. 79, No. 2, pp. 261–265.
About this article
Cite this article
Lubenko, D.M., Losev, V.F., Andreev, Y.M. et al. Generating femtosecond pulses in the mid-IR and THz ranges in GaSe1 − x Te x crystals. Bull. Russ. Acad. Sci. Phys. 79, 238–241 (2015). https://doi.org/10.3103/S1062873815020161
Published:
Issue Date:
DOI: https://doi.org/10.3103/S1062873815020161