Abstract.
The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surface energy states (SES) or interface energy states (IES). For a mechanically, chemically or particles processed (Ar-plasma etching, ion implantation, etc) semiconductor surface, the measured PA signal can be expect to increase as a consequence of the surface (interface) optical, thermal and carrier transport properties changes. The SES on Si wafer and IES in SiO2 film/Si substrate are investigated by PA spectroscopy. The sub-bandgap PA spectra are used to obtain the energy-dependent distribution of SES or IES.
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Todorović, D., Smiljanić, M., Jović, V. et al. Investigation of interface and surface energy states in semiconductors by PA method. Eur. Phys. J. Spec. Top. 153, 247–250 (2008). https://doi.org/10.1140/epjst/e2008-00437-1
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DOI: https://doi.org/10.1140/epjst/e2008-00437-1