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Thermal conductivity dependent temperature during photo-thermo-elastic excitation of semiconductor material with volumetric absorption laser heat source in gravitational field

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Abstract

In this following work, a theoretical novel model for exited semiconducting medium is studied in the context of photothermal transport process. The dual-phase-lag (DPL) is used to modify the heat (energy) conduction equation when the thermal conductivity is variable during an initial hydrostatic stresses. The thermal conductivity depends on a temperature. The photo-thermoelasticity theory is introduced in a generalized form under the impact of gravitational field with a volumetric absorption laser which considered a heat source. The governing equations are studied in two-dimensional (2D) deformations and are solved using the harmonic wave technique. The considered physical quantities are obtained completely when are applied some thermal and mechanical loads at the free surface of silicon (Si) semiconductor elastic medium. The considered numerical physical fields are obtained graphically and discussed theoretically. The impacts of various variables are illustrated graphically which based on the thermal relaxation time (memories time, DPL theory). The comparisons are made under the effect of heat source, gravity and the variable thermal conductivity graphically.

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Acknowledgements

This Project was supported financially by the Academy of Scientific Research and Technology (ASRT), Egypt, Grant No. (6730)(ASRT) is the 2nd affiliation of this research.

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Authors and Affiliations

  1. Department of Mathematics, Faculty of Science, Zagazig University, P.O. Box 44519, Zagazig, Egypt

    Kh. Lotfy & Ramdan. S. Tantawi

  2. Academy of Scientific Research and Technology (ASRT), 101 Qasr Al Aini St., P. O. Box 11516, Cairo, Egypt

    Kh. Lotfy & Ramdan. S. Tantawi

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  1. Kh. Lotfy
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  2. Ramdan. S. Tantawi
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Correspondence to Kh. Lotfy.

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Lotfy, K., Tantawi, R.S. Thermal conductivity dependent temperature during photo-thermo-elastic excitation of semiconductor material with volumetric absorption laser heat source in gravitational field. Eur. Phys. J. Plus 136, 289 (2021). https://doi.org/10.1140/epjp/s13360-021-01237-x

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