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Photoluminescence properties of type I InAs/InGaAsSb quantum dots

  • Regular Article - Mesoscopic and Nanoscale Systems
  • Published:
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Abstract

This paper presents a detailed study on the effect of the strain reducing layer (SRL) made with InGaAsSb on the photoluminescence (PL) of type I InAs/GaAs quantum dots (QDs). For the InGaAsSb SRL, measurement results have shown that the emission wavelength reaches 1.4 µm for the ground state (GS) and 1.33 µm for the first excited state (ES) at room temperature (RT). Besides, the investigation of the temperature-dependent PL shows the strong effect of SRL in reducing the barrier potential at the interface between the capping layer and QDs, and increasing the carrier injection efficiency inside the QDs, at low temperature, leading to an enhancement of the luminescence of this sample. Furthermore, the increase of excitation density from 40 to 200 W/cm2 for all temperature between 10 and 220 K reveals that incorporating InGaAsSb SRL in InAs/GaAs QDs is of great importance on the understanding of some devices operating at room temperature or higher.

Graphical Abstract

Evolution of the integrated PL intensity of the GS and ES transitions vs. excitation density of InGaAsSb quantum dots for different temperatures.

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This work does not propose any code or software as a result or findings.

Data availability statement

This manuscript has no associated data or the data will not be deposited. [Authors' comment: The used data is presented through the figures of the manuscript.]

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Acknowledgements

The authors acknowledge the major participation of the “Center for Research and Energy Technologies (CRTEn), Tunisia” headed by Professor Radhouane Chtourou which provided the necessary setup for photoluminescence measurements.

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We have not received any funding for the preparation of this paper.

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Authors and Affiliations

  1. Institut Préparatoire aux Etudes Scientifiques et Techniques, Laboratoire Matèriaux-Molécules et Applications, Université de Carthage, BP51, 2070, La Marsa, Tunisia

    Afef Ben Mansour, Rihab Sellami & Adnen Melliti

  2. Université de Tunis, Ecole Nationale Supérieure des Ingénieurs de Tunis, 5 Rue Taha Hussein, Montfleury, 1008, Tunis, Tunisia

    Afef Ben Mansour, Rihab Sellami & Adnen Melliti

  3. National Center for Nanotechnology and Advanced Materials, KACST, Riyadh, 11442, Saudi Arabia

    Abdelmajid Salhi

  4. Qatar Environment and Energy Research Institute (QEERI), Hamad Bin Khalifa University, Qatar Foundation, PO Box 34110, Doha, Qatar

    Abdelmajid Salhi

Authors
  1. Afef Ben Mansour
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  2. Rihab Sellami
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  3. Adnen Melliti
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  4. Abdelmajid Salhi
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Contributions

ABM wrote the whole paper and carried out the experimental measurements in the laboratory. ABM also participated actively in the interpretation of the experimental results. RS contributed to the analysis of experimental results. AM proposed the general objectives of the study. AM also analyzed in detail the obtained results. AS provided the three samples used in the study and all the details about their fabrication.

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Correspondence to Afef Ben Mansour.

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Ben Mansour, A., Sellami, R., Melliti, A. et al. Photoluminescence properties of type I InAs/InGaAsSb quantum dots. Eur. Phys. J. B 95, 94 (2022). https://doi.org/10.1140/epjb/s10051-022-00357-2

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