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Temperature- and diameter-dependent electrical conductivity of nitrogen doped ZnO nanowires

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Abstract

A modified formula to calculate the axial conductivity of nanowires was proposed based on the one-dimensional quantum state density distribution and Boltzmann transport theory. Numerical simulations of the ZnO nanowires (ZnONWs) and Nitrogen-doped ZnO nanowires (N-ZnONWs) were implemented using data from the first principles calculation. The results indicate that ZnONWs are low-conductivity wide band-gap semiconductors owing to their low carrier concentrations at room temperature, with N-doping increasing the conductivity. The N-ZnONWs carrier concentrations increased with increasing temperature, and possessed significantly higher carrier concentrations than ZnONWs. With an increase in diameter, the ZnONWs conductivities increased, whereas the N-ZnONWs conductivities decreased.

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Authors and Affiliations

  1. Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, 066004, P.R. China

    Shu-Long Li, Ya-Lin Li, Pei Gong, Ya-Hui Jia & Xiao-Yong Fang

  2. School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, P.R. China

    Xiao-Xia Yu

  3. School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P.R. China

    Mao-Sheng Cao

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  1. Shu-Long Li
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  2. Xiao-Xia Yu
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  3. Ya-Lin Li
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Correspondence to Xiao-Yong Fang or Mao-Sheng Cao.

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Li, SL., Yu, XX., Li, YL. et al. Temperature- and diameter-dependent electrical conductivity of nitrogen doped ZnO nanowires. Eur. Phys. J. B 92, 155 (2019). https://doi.org/10.1140/epjb/e2019-100208-3

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  • DOI: https://doi.org/10.1140/epjb/e2019-100208-3

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