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Evolution of Floquet topological quantum states in driven semiconductors

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Abstract

Spatially uniform excitations can induce Floquet topological bandstructures within insulators which have equal characteristics to those of topological insulators. Going beyond we demonstrate in this article the evolution of Floquet topological quantum states for electromagnetically driven semiconductor bulk matter. We show the direct physical impact of the mathematical precision of the Floquet-Keldysh theory when we solve the driven system of a generalized Hubbard model with our framework of dynamical mean field theory (DMFT) in the non-equilibrium. We explain the physical consequences of the topological non-equilibrium effects in our results for correlated sysems with impact on optoelectronic applications.

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Authors and Affiliations

  1. Georg-Simon-Ohm University of Applied Sciences, Keßlerplatz 12, 90489, Nürnberg, Germany

    Andreas Lubatsch

  2. Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ, 07974-0636, USA

    Regine Frank

  3. Serin Physics Laboratory, Department of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854-8019, USA

    Regine Frank

Authors
  1. Andreas Lubatsch
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  2. Regine Frank
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Correspondence to Regine Frank.

Additional information

Contribution to the Topical Issue “Non-Linear and Complex Dynamics in Semiconductors and Related Materials”, edited by Kathy Lüdge.

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Lubatsch, A., Frank, R. Evolution of Floquet topological quantum states in driven semiconductors. Eur. Phys. J. B 92, 215 (2019). https://doi.org/10.1140/epjb/e2019-100087-0

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