Abstract
Areas of single-layer MoS2 film can be prepared in a tube furnace without the need for temperature control. The films were characterized by means of Raman spectroscopy, photoluminescence, low-energy electron diffraction and microscopy, and X-ray photoelectron spectroscopy and mapping. Transport measurements show n-doped material with a mobility of 0.26 cm2 V-1 s-1.
Similar content being viewed by others
References
K.F. Mak, C. Lee, J. Hone, J. Shan, T.F. Heinz, Phys. Rev. Lett. 105, 136805 (2010)
A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, F. Wang, Nano Lett. 10, 1271 (2010)
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Nat. Nanotech. 6, 147 (2011)
S. Ghatak, A.N. Pal, A. Ghosh, ACS Nano 5, 7707 (2011)
D.J. Late, B. Liu, H.S.S.R. Matte, V.P. Dravid, C.N.R. Rao, ACS Nano 6, 5635 (2012)
K.-K. Liu et al., Nano Lett. 12, 1538 (2012)
H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D.W.H. Fam, A.I.Y. Tok, Q. Zhang, H. Zhang, Small 8, 63 (2012)
Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, H. Zhang, ACS Nano 6, 74 (2011)
A. Ayari, E. Cobas, O. Ogundadegbe, M.S. Fuhrer, J. Appl. Phys. 101, 014507 (2007)
Y. Zhan, Z. Liu, S. Najmaei, P.M. Ajayan, J. Lou, Small 8, 966 (2012)
Y. Zhang, J. Ye, Y. Matsuhashi, Y. Iwasa, Nano Lett. 12, 1136 (2012)
D. Xiao, G.-B. Liu, W. Feng, X. Xu, W. Yao, Phys. Rev. Lett. 108, 196802 (2012)
H. Zeng, J. Dai, W. Yao, D. Xiao, X. Cui, Nat. Nanotech. 7, 490 (2012)
K.F. Mak, K. He, J. Shan, T.F. Heinz, Nat. Nanotech. 7, 494 (2012)
T. Cao et al., Nat. Commun. 3, 887 (2012)
T. Cao, J. Feng, J. Shi, Q. Niu, E. Wang, arXiv:1112.4013 [cond-mat.mtrl-sci] (2012)
K. Novoselov, D. Jiang, F. Schedin, T. Booth, V. Khotkevich, S. Morosov, A. Geim, Proc. Natl. Am. Soc. 102, 10454 (2005)
D. Kim, D. Sun, W. Lu, Z. Cheng, Y. Zhu, D. Le, T.S. Rahman, L. Bartels, Langmuir 27, 11650 (2011)
J.V. Lauritsen et al., J. Catal. 249, 220 (2007)
S. Helveg, J. Lauritsen, E. Laegsgaard, I. Stensgaard, J. Norskov, B. Clausen, H. Topsoe, F. Besenbacher, Phys. Rev. Lett. 84, 951 (2000)
T.F. Jaramillo, K.P. Jørgensen, J. Bonde, J.H. Nielsen, S. Horch, I. Chorkendorff, Science 317, 100 (2007)
Y.-H. Lee et al., Adv. Mater. (2012)
J. Kibsgaard, B.S. Clausen, H. Topsøe, E. Lægsgaard, J.V. Lauritsen, F. Besenbacher, J. Catal. 263, 98 (2009)
J. Kibsgaard, A. Tuxen, M. Levisen, E. Laegsgaard, S. Gemming, G. Seifert, J.V. Lauritsen, F. Besenbacher, Nano Lett. 8, 3928 (2008)
I. Vilfan, Eur. Phys. J. B 51, 277 (2006)
D. Sun et al., Angew. Chem. 124, 10430 (2012)
R.K. Tiwari, J.S. Yang, M. Saeys, C. Joachim, Surf. Sci. 602, 2628 (2008)
J.T. Robinson, S.W. Schmucker, C.B. Diaconescu, J.P. Long, J.C. Culbertson, T. Ohta, A.L. Friedman, T.E. Beechem, ACS Nano 7, 637 (2013)
NIST, (National Institute of Standards and Technology, Gaithersburg, MD, 1989)
S. Balendhran, J.Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, K. Kalantar-zadeh, Nanoscale 4, 461 (2012)
C. Lee, H. Yan, L.E. Brus, T.F. Heinz, J. Hone, S. Ryu, ACS Nano 4, 2695 (2010)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Mann, J., Sun, D., Ma, Q. et al. Facile growth of monolayer MoS2 film areas on SiO2 . Eur. Phys. J. B 86, 226 (2013). https://doi.org/10.1140/epjb/e2013-31011-y
Received:
Revised:
Published:
DOI: https://doi.org/10.1140/epjb/e2013-31011-y