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Facile growth of monolayer MoS2 film areas on SiO2

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Abstract

Areas of single-layer MoS2 film can be prepared in a tube furnace without the need for temperature control. The films were characterized by means of Raman spectroscopy, photoluminescence, low-energy electron diffraction and microscopy, and X-ray photoelectron spectroscopy and mapping. Transport measurements show n-doped material with a mobility of 0.26 cm2 V-1 s-1.

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Correspondence to Ludwig Bartels.

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Mann, J., Sun, D., Ma, Q. et al. Facile growth of monolayer MoS2 film areas on SiO2 . Eur. Phys. J. B 86, 226 (2013). https://doi.org/10.1140/epjb/e2013-31011-y

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  • DOI: https://doi.org/10.1140/epjb/e2013-31011-y

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