Abstract
The quantum Goos-Hänchen (GH) shift of an electron (massive Dirac fermion) at a potential step in bilayer graphene is investigated. We show that the GH shift depends on the step height, the kinetic energy of the electron and incident angle. It is found that the GH shift can be large (positive or negative) under the suitable conditions.
Similar content being viewed by others
References
F. Goos, H. Hächen, Ann. Phys. 1, 333 (1947)
K.V. Artmann, Ann. Phys. 2, 87 (1948)
H.K.V. Lotsch, Optik 32, 116 (1970)
H.K.V. Lotsch, Optik 32, 189 (1970)
H.K.V. Lotsch, Optik 32, 299 (1971)
H.K.V. Lotsch, Optik 32, 553 (1971)
L.-G. Wang, S.-Y. Zhu, Appl. Phys. B 98, 459 (2010)
Y.Y. Huang, W.T. Dong, L. Gao, C.W. Qiu, Opt. Express 19, 1310 (2011)
X. Chen, C.-F. Li, Y. Ban, Phys. Rev. B 77, 073307 (2008)
X. Chen, X.-J. Lu, Y. Wang, C.-F. Li, Phys. Rev. B 83, 195409 (2011)
V.-O. de Haan, J. Plomp, T.M. Rekveldt, W.H. Kraan, A.A. van Well, R.M. Dalgliesh, S. Langridge, Phys. Rev. Lett. 104, 010401 (2010)
J.-H. Huang, Z.-L. Duan, H.-Y. Ling, W.-P. Zhang, Phys. Rev. A 77, 063608 (2008)
L.-G. Wang, M. Ikram, M.S. Zubairy, Phys. Rev. A 77, 023811 (2008)
K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Science 306, 666 (2004)
A.H. Castro Neto, F. Guinea, N.M.R. Peres, K.S. Novoselov, A.K. Geim, Rev. Mod. Phys. 81, 109 (2009)
X. Du, I. Skachko, A. Barker, E.Y. Andrei, Nat. Nanotechnol. 3, 491 ( 2008)
F. Miao, S. Wijeratne, U. Coskun, Y. Zhang, W. Bao, C.N. Lau, Science 317, 1530 (2007)
S.D. Sarma, S. Adam, E.H. Hwang, E. Rossi, Rev. Mod. Phys. 83, 407 (2011)
M. Koshino, T. Ando, Phys. Rev. B 73, 245403 (2006)
S. Park, H.-S. Sim, Phys. Rev. Lett. 103, 196802 (2009)
E. McCann, V.I. Fal’ko, Phys. Rev. Lett. 96, 086805 (2006)
C.W.J. Beenakker, R.A. Sepkhanov, A.R. Akhmerov, J. Tworzydło, Phys. Rev. Lett. 102, 146804 (2009)
M. Sharma, S. Ghosh, J. Phys.: Condens. Matter 23, 055501 (2011)
Z.-H. Wu, F. Zhai, F.M. Peeters, H.Q. Xu, Kai Chang, Phys. Rev. Lett. 106, 176802 (2011)
M.S. Jang, H. Kim, H.A. Atwater, W.A. Goddard III, Appl. Phys. Lett. 97, 043504 (2010)
X. Chen, J.-W. Tao, Y. Ban, Eur. Phys. J. B 79, 203 (2011)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Cheng, M. Goos-Hänchen shift in bilayer graphene. Eur. Phys. J. B 85, 89 (2012). https://doi.org/10.1140/epjb/e2012-20729-7
Received:
Revised:
Published:
DOI: https://doi.org/10.1140/epjb/e2012-20729-7