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Goos-Hänchen shift in bilayer graphene

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Abstract

The quantum Goos-Hänchen (GH) shift of an electron (massive Dirac fermion) at a potential step in bilayer graphene is investigated. We show that the GH shift depends on the step height, the kinetic energy of the electron and incident angle. It is found that the GH shift can be large (positive or negative) under the suitable conditions.

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Correspondence to M. Cheng.

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Cheng, M. Goos-Hänchen shift in bilayer graphene. Eur. Phys. J. B 85, 89 (2012). https://doi.org/10.1140/epjb/e2012-20729-7

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  • DOI: https://doi.org/10.1140/epjb/e2012-20729-7

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