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One-phonon resonant electron Raman scattering in a cylindrical semiconductor quantum dot

  • Solid State and Materials
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Abstract

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with the surface optical (SO) phonon modes in semiconductor quantum dots (QDs). We consider the Fröhlich electron-phonon interaction in the framework of the dielectric continuum approach. Different scattering configurations are discussed and the selection rules for the processes are also studied. Singularities are found to be sensitively size-dependent and by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for QDs with large and small size is presented. The numerical results are also compared with that of experiments.

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Authors and Affiliations

  1. School of Physics and Optical Information Sciences, JiaYing University, 514015, Meizhou, Guangdong, P.R. China

    Q.-H. Zhong

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  1. Q.-H. Zhong
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Correspondence to Q.-H. Zhong.

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Zhong, QH. One-phonon resonant electron Raman scattering in a cylindrical semiconductor quantum dot. Eur. Phys. J. B 74, 451–456 (2010). https://doi.org/10.1140/epjb/e2010-00122-6

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  • DOI: https://doi.org/10.1140/epjb/e2010-00122-6

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