Abstract.
Utilizing the state dependent projection technique, we derive a formula for intraband transition linewidths due to longitudinal optical phonon scattering for the electrons in a triangular potential well. We find for GaN that the absorption power is keenly affected by the screening in such a way that the power increases with the electron density. We also find that the linewidth increases with the temperature, but decreases with the electric field applied to the system.
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Kang, N., Lee, H., Lee, S. et al. Theory of intraband transition linewidths due to LO phonon scattering in triangular well based on the many body projection method. Eur. Phys. J. B 63, 59–63 (2008). https://doi.org/10.1140/epjb/e2008-00214-x
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DOI: https://doi.org/10.1140/epjb/e2008-00214-x