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Temperature dependence of photoluminescence in amorphous Si1-xCx:H films

  • Solid and Condensed State Physics
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Abstract.

We have investigated the temperature dependence of photoluminescence in hydrogenated amorphous silicon-carbon alloys a-Si1-xCx:H prepared by glow discharge in the low-power regime. The radiative recombination process, due to photocarriers trapped on band-edge states, is in competition with the thermal escape of the photocarriers into the mobility bands. The model gives a quantitative fit with experiment, without any adjustable parameter, provided the width of the band-edge distribution of states is taken as the width of the conduction band only (measured by “photo-induced infra-red spectroscopy”) and not as the Urbach energy, as it is usually assumed.

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Authors and Affiliations

  1. Laboratoire de Physique de la Matière Condensée, CNRS-École Polytechnique, 91128, Palaiseau, France

    K. Rerbal, I. Solomon, J.-N. Chazalviel & F. Ozanam

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  1. K. Rerbal
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  2. I. Solomon
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  3. J.-N. Chazalviel
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  4. F. Ozanam
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Correspondence to K. Rerbal.

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Rerbal, K., Solomon, I., Chazalviel, JN. et al. Temperature dependence of photoluminescence in amorphous Si1-xCx:H films. Eur. Phys. J. B 51, 61–64 (2006). https://doi.org/10.1140/epjb/e2006-00198-5

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  • DOI: https://doi.org/10.1140/epjb/e2006-00198-5

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