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Modeling the emission red-shift in amorphous semiconductors and in organic-inorganic hybrids using extended multiple trapping

  • Solid and Condensed State Physics
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Abstract.

A model of thermal relaxation within localized states based on the extended multiple trapping framework is used to describe the red-shift of the emission maximum intensity as the excitation energy decreases. The model is applied to amorphous hydrogenated silicon (a-Si:H) and to organic-inorganic hybrids systems giving values for the energy gap, E0, (1.896–3.882 eV) and for the β (4.36–12.08 eV-1) parameter that characterizes the experimental decay of the density of localized states within the gap consistent with those achieved by some other recombination models previously reported for a-Si:H.. The thermal relaxation within localized states model is more physically detailed incorporating radiative and non-radiative transition mechanism for carriers relaxing into localized states that are explicitly absent in the previously reported theoretical descriptions

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Authors and Affiliations

  1. Departamento de Física, Universidade de Aveiro, 3810–, 193, Aveiro, Portugal

    R. A. Sá Ferreira, A. L. Ferreira & L. D. Carlos

  2. CICECO, Universidade de Aveiro, 3810–, 193, Aveiro, Portugal

    R. A. Sá Ferreira & L. D. Carlos

Authors
  1. R. A. Sá Ferreira
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  2. A. L. Ferreira
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  3. L. D. Carlos
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Correspondence to L. D. Carlos.

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Sá Ferreira, R., Ferreira, A. & Carlos, L. Modeling the emission red-shift in amorphous semiconductors and in organic-inorganic hybrids using extended multiple trapping. Eur. Phys. J. B 50, 371–378 (2006). https://doi.org/10.1140/epjb/e2006-00157-2

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