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Field-domain dynamics in negative-effective-mass terahertz oscillators

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Abstract.

We have theoretically studied electric-field-domain dynamics and current self-oscillations in dc-biased negative-effective-mass (NEM) p + pp + diodes. The formation and traveling of electric-field domains in the diodes are investigated in detail with a realistic treatment of the scatterings contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon within the balance-equation theory. The interesting patterns of the spatiotemporal electric-field domains are shown as a gray density plot with the applied bias as a controlling parameter. It is found that, the applied bias could largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM p + pp + diode with a submicrometer p-base. The NEM p + pp + diode may therefore be developed as an electrically tunable THz-frequency oscillator.

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Authors and Affiliations

  1. State Key Laboratory of Functional Materials for Informatics Shanghai, Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050, Shanghai, P.R. China

    J. C. Cao

  2. Institute for Microstructural Sciences, National Research Council, K1A 0R6, Ontario, Ottawa, Canada

    H. C. Liu

Authors
  1. J. C. Cao
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  2. H. C. Liu
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Corresponding author

Correspondence to J. C. Cao.

Additional information

Received: 18 July 2003, Published online: 23 December 2003

PACS:

73.61.Ey III-V semiconductors - 73.50.Fq High-field and nonlinear effects - 85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices) - 85.30.De Semiconductor-device characterization, design, and modeling

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Cao, J.C., Liu, H.C. Field-domain dynamics in negative-effective-mass terahertz oscillators. Eur. Phys. J. B 36, 313–316 (2003). https://doi.org/10.1140/epjb/e2003-00349-2

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  • DOI: https://doi.org/10.1140/epjb/e2003-00349-2

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