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Signature of Kondo effect in silicon quantum dots

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The European Physical Journal B - Condensed Matter and Complex Systems Aims and scope Submit manuscript

Abstract:

We report observation of the Kondo effect in the Coulomb blockade oscillations of an impurity quantum dot (IQD). This IQD is formed in the channel of a 100 nm gate length Silicon MOSFET. The quantitative analysis of the anomalous temperature and voltage dependence for the drain-source current over a series of Coulomb blockade oscillations is performed. It strongly supports the Kondo explanation for the conductance behavior at very low temperature in this standard microelectronics device.

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Authors and Affiliations

  1. DRFMC-SPSMS, CEA-Grenoble, 38054 Grenoble Cedex 9, France, , , , , , FR

    M. Specht & M. Sanquer

  2. CEA-LETI, CEA-Grenoble, 38054 Grenoble Cedex 9, France, , , , , , FR

    S. Deleonibus & G. Guégan

Authors
  1. M. Specht
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  2. M. Sanquer
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  3. S. Deleonibus
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  4. G. Guégan
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Additional information

Received 13 November 2001 and Received in final form 18 February 2002

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Specht, M., Sanquer, M., Deleonibus, S. et al. Signature of Kondo effect in silicon quantum dots. Eur. Phys. J. B 26, 503–508 (2002). https://doi.org/10.1140/epjb/e20020119

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  • DOI: https://doi.org/10.1140/epjb/e20020119

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