Abstract
An approach is proposed to calculate the optimal parameters of silicon-based heterojunction solar cells whose key feature is a low rate of recombination processes in comparison with direct-gap semiconductors. It is shown that at relatively low majority-carrier concentrations (N d ∼ 1015 cm–3), the excess carrier concentration can be comparable to or higher than N d . In this case, the efficiency η is independent of N d . At higher N d , the dependence η(N d ) is defined by two opposite trends. One of them promotes an increase in η with N d , and the other associated with Auger recombination leads to a decrease in η. The optimum value N d ≈ 2 × 1016 cm–3 at which η of such a cell is maximum is determined. It is shown that maximum η is 1.5–2% higher than η at 1015 cm–3.
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Original Russian Text © A.V. Sachenko, Yu.V. Kryuchenko, V.P. Kostylyov, I.O. Sokolovskyi, A.S. Abramov, A.V. Bobyl, I.E. Panaiotti, E.I. Terukov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 2, pp. 259–263.
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Sachenko, A.V., Kryuchenko, Y.V., Kostylyov, V.P. et al. Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon. Semiconductors 50, 257–260 (2016). https://doi.org/10.1134/S1063782616020226
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DOI: https://doi.org/10.1134/S1063782616020226