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Determination of the charge transport mechanism in p-n junctions by analyzing temperature dependences of forward current-voltage characteristics

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Abstract

A method is suggested for determining the charge transport mechanism in p-n junctions by analyzing the temperature dependence of forward current-voltage characteristics at a low injection level. The method has been experimentally tested with Si:Au diodes, green GaP LEDs, and blue AlGaN/InGaN/GaN LEDS with a quantum well.

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References

  1. S. V. Bulyarskiĭ and N. S. Grushko, Generation-Recombination Processes in Active Elements (Mosk. Gos. Univ., Moscow, 1995) [in Russian].

    Google Scholar 

  2. S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984).

    Google Scholar 

  3. Tunneling Phenomena in Solids, edited by E. Burstein and S. Lundqvist (Plenum Press, New York, 1969; Mir, Moscow, 1973).

    Google Scholar 

  4. C. T. Sah, R. N. Noyce, and W. Shokley, Proc. IRE 45, 1228 (1957).

    Article  Google Scholar 

  5. S. V. Bulyarskiĭ, N. S. Grushko, A. I. Somov, and A. V. Lakalin, Fiz. Tekh. Poluprovodn. 31, 1146 (1997) [Semiconductors 31, 983 (1997)].

    Google Scholar 

  6. C. T. Sah and W. Shockley, Phys. Rev. 109, 1103 (1957).

    Article  ADS  MathSciNet  Google Scholar 

  7. V. V. Evstropov, K. V. Kiselev, I. L. Petrovich, and B. V. Tsarenkov, Fiz. Tekh. Poluprovodn. 18, 902 (1984) [Sov. Phys. Semiconductors 18, 560 (1984)].

    Google Scholar 

  8. V. V. Evstropov, K. V. Kiselev, I. L. Petrovich, and B. V. Tsarenkov, Fiz. Tekh. Poluprovodn. 18, 1852 (1984) [Sov. Phys. Semiconductors 18, 1156 (1984)].

    Google Scholar 

  9. L. S. Berman and A. A. Lebedev, Deep-Level Transient Spectroscopy of Semiconductors (Nauka, Leningrad, 1981) [in Russian].

    Google Scholar 

  10. N. S. Grushko, A. V. Lakalin, and E. A. Evstigneeva, Izv. Vyssh. Uchebn. Zaved., Élektron., No. 3, 48 (2002).

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Authors and Affiliations

  1. Ul’yanovsk State University, Ul’yanovsk, Russia

    N. S. Grushko, A. V. Lakalin & A. I. Somov

Authors
  1. N. S. Grushko
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  2. A. V. Lakalin
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  3. A. I. Somov
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Corresponding author

Correspondence to A. V. Lakalin.

Additional information

Original Russian Text © N.S. Grushko, A.V. Lakalin, A.I. Somov, 2008, published in Izvestiya vysshikh uchebnykh zavedenii. Elektronika, 2008, Vol. 42, No. 13.

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Grushko, N.S., Lakalin, A.V. & Somov, A.I. Determination of the charge transport mechanism in p-n junctions by analyzing temperature dependences of forward current-voltage characteristics. Semiconductors 42, 1532–1535 (2008). https://doi.org/10.1134/S1063782608130174

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  • DOI: https://doi.org/10.1134/S1063782608130174

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