Abstract
We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity resulting from interference between resonant tunneling channel through impurity energy level and direct tunneling channel between the tunneling contact leads. We have found that interference between tunneling channels strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS) depending on the distance value from the impurity.
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Mantsevich, V.N., Maslova, N.S. Spatial effects of Fano resonance in local tunneling conductivity in vicinity of impurity on semiconductor surface. Jetp Lett. 91, 139–142 (2010). https://doi.org/10.1134/S0021364010030082
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DOI: https://doi.org/10.1134/S0021364010030082