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Conduction through localized states in a single crystal of the TlGa0.5Fe0.5Se2 alloy

  • Semiconductors and Dielectrics
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Abstract

Layered single crystals of the TlGa0.5Fe0.5Se2 alloy in a dc electric field at temperatures ranging from 128 to 178 K are found to possess variable-range-hopping conduction along natural crystal layers through states localized in the vicinity of the Fermi level. The parameters characterizing the electrical conduction in the TlGa0.5Fe0.5Se2 crystals are estimated as follows: the density of states near the Fermi level N F = 2.8 × 1017 eV−1 cm−3, the spread in energy of these states ΔE = 0.13 eV, the average hopping length R av = 233 Å, and the concentration of deep-lying traps N t = 3.6 × 1016 cm−3.

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Translated from Fizika Tverdogo Tela, Vol. 47, No. 2, 2005, pp. 208–209.

Original Russian Text Copyright © 2005 by Mustafaeva, Kerimova, Dzhabbarly.

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Mustafaeva, S.N., Kerimova, É.M. & Dzhabbarly, A.I. Conduction through localized states in a single crystal of the TlGa0.5Fe0.5Se2 alloy. Phys. Solid State 47, 214–216 (2005). https://doi.org/10.1134/1.1866395

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  • DOI: https://doi.org/10.1134/1.1866395

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