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Ga x In1 − x Bi y As z Sb1 − y − z /InSb and InBi y As z Sb1 − y − z /InSb heterostructures grown in a temperature gradient

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Abstract

Heterophase equilibria in the Ga x In1 − x Bi y As z Sb1 − y − z -InSb and InBi y As z Sb1 − y − z -InSb systems have been analyzed within the simple solution approximation. Ga x In1 − x Bi y As z Sb1 − y − z /InSb and InBi y As z Sb1 − y − z /InSb heterostructures have been grown in a temperature gradient, and their composition and structural perfection have been assessed.

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Authors and Affiliations

  1. North Caucasus State Technical University, pr. Kulakova 2, Stavropol, 355029, Russia

    B. M. Sinel’nikov

  2. Southern Scientific Center, Russian Academy of Sciences, ul. Chekhova 41, Rostov-on-Don, 344006, Russia

    M. L. Lunina

Authors
  1. B. M. Sinel’nikov
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  2. M. L. Lunina
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Original Russian Text © B.M. Sinel’nikov, M.L. Lunina, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 9, pp. 995–1001.

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Sinel’nikov, B.M., Lunina, M.L. Ga x In1 − x Bi y As z Sb1 − y − z /InSb and InBi y As z Sb1 − y − z /InSb heterostructures grown in a temperature gradient. Inorg Mater 48, 877–883 (2012). https://doi.org/10.1134/S0020168512090154

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  • DOI: https://doi.org/10.1134/S0020168512090154

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