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Quasi-one-dimensional distribution of macropores in anodically etched uniaxially stressed silicon plates

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Abstract

Gradual transition from quasi-hexagonal to quasi-one-dimensional order was experimentally observed in an arrangement of macropores etched on the surface of a Si(100) plate inhomogeneously strained by bending. The observed phenomenon is theoretically described within the framework of a defect-deformation mechanism of the formation of ordered ensembles of seeding pores in etched semiconductors and metals.

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Authors and Affiliations

  1. International Laser Center, Moscow State University, Moscow, Russia

    V. I. Emel’yanov, K. I. Eremin, V. V. Starkov & E. Yu. Gavrilin

  2. Institute for Problems of Microelectronic Technologies, Russian Academy of Sciences, Chernogolovka, Moscow oblast, Russia

    V. I. Emel’yanov, K. I. Eremin, V. V. Starkov & E. Yu. Gavrilin

Authors
  1. V. I. Emel’yanov
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  2. K. I. Eremin
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  3. V. V. Starkov
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  4. E. Yu. Gavrilin
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 29, No. 6, 2003, pp. 19–25.

Original Russian Text Copyright © 2003 by Emel’yanov, Eremin, Starkov, Gavrilin.

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Emel’yanov, V.I., Eremin, K.I., Starkov, V.V. et al. Quasi-one-dimensional distribution of macropores in anodically etched uniaxially stressed silicon plates. Tech. Phys. Lett. 29, 226–229 (2003). https://doi.org/10.1134/1.1565641

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  • DOI: https://doi.org/10.1134/1.1565641

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