Abstract
Porous silicon has been studied with photoluminescence, photoluminescence excitation, and photoacoustic spectroscopy. From the luminescence data, an energy-level diagram related to the luminescence is constructed. The diagram is confirmed in detail by the photoacoustic spectra. The results are discussed with the conclusion that they are in good agreement with the surface-band oxyhydride-like emitter, which recently has been established as the source for the photoluminescence from porous silicon.
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References
L.T. Canham, Appl. Phys. Lett. 57, 2046 (1990).
A.G. Cullis, L.T. Canham, and P.D.J. Calcott, J. Appl. Phys. 82, 909 (1997).
L. Canham (ed.), Properties of Porous Silicon, EMIS Datareview Series no. 18 (INSPEC, London, 1997).
O.K. Andersen and E. Veje, Phys. Rev. B 53, 15, 643 (1996).
A. Ferreira da Silva, N. Veissid, C.Y. An, I. Pepe, N. Barros de Oliveira, and A.V. Batista da Silva, Appl. Phys. Lett. 69, 1930 (1996).
F.C. Romstad and E. Veje, Phys. Rev. B 55, 5220 (1997).
J.L. Gole, F.P. Dudel, D. Grantier, and D.A Dixon, Phys. Rev. B 56, 2137 (1997).
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Egeberg, R., Veje, E., Da Silva, A.F. et al. The Energy-Band Structure of Porous Silicon Studied with Photoluminescence Excitation and Photoacoustic Spectroscopy. Journal of Porous Materials 7, 173–176 (2000). https://doi.org/10.1023/A:1009674401781
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DOI: https://doi.org/10.1023/A:1009674401781