Abstract
The thermoelectric properties of alkali-ion-doped compounds Cu3Sb1−xMxSe4 (M = Na and K) prepared by mechanical alloying and spark plasma sintering compaction, are investigated systematically between 300 K and 673 K. The increase in the hole carrier concentration causes a reduction in the electrical resistivity in the whole temperature range and a rise in the power factor at elevated temperature for alkali-ion-doped compounds as compared to pristine Cu3SbSe4. For example, the maximum power factors for Cu3Sb1−xNaxSe4 (x = 0.02 and 0.03) and Cu3Sb0.99K0.01Se4 at 673 K are all increased by around 1.6 times compared to the un-doped sample. As a result, the peak ZT value reaches 0.52 and 0.71 at 673 K for Cu3Sb1−xNaxSe4 (x = 0.02 and 0.03) and Cu3Sb0.99K0.01Se4, which is 27% and 73% larger than that (0.41) of the un-doped sample, respectively. In this work, K-doping is more effective in improving thermoelectric performance of Cu3SbSe4, due to its larger ionic radius, which can bring more lattice distortions and point defects to scatter phonons than Na-doping.
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Financial supports from the Natural Science Foundation of China under Grant No. 51672278 is greatly acknowledged.
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Dou, Y., Zhu, Q., Du, Y. et al. Enhanced Thermoelectric Performance of Cu3SbSe4 Doped with Alkali-Ion (Na and K). Electron. Mater. Lett. 16, 99–105 (2020). https://doi.org/10.1007/s13391-020-00198-0
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DOI: https://doi.org/10.1007/s13391-020-00198-0