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F-doped ZnO by sol-gel spin-coating as a transparent conducting thin film

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Abstract

This paper reports a simple non-alkoxide sol-gel route for depositing F-doped ZnO thin film on glass substrates. Ammonium fluoride and zinc acetate were used as the dopant precursor and starting material for ZnO, respectively. After the first crystallization at 550°C in air, the sol-gel spin coated ZnO:F thin films at a F concentration < 5 at. % showed a nanosized polycrystalline structure with a c-plane preferred orientation. The structures, electrical resistivity, carrier concentration, mobility and optical transmittance were strongly dependent on the F concentration. The F concentration > 5 at. % degraded the microstructures, electrical conductivity, and optical transmittance. The second post-heat-treatment at 450°C in a reducing environment resulted in higher electrical resistivity than the first post-heat-treatment in air.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Seoul, 90 Jeonnong-dong, Dongdaemun-gu, Seoul, 130-743, Korea

    Gil Mo Nam & Myoung Seok Kwon

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  1. Gil Mo Nam
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  2. Myoung Seok Kwon
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Correspondence to Myoung Seok Kwon.

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Nam, G.M., Kwon, M.S. F-doped ZnO by sol-gel spin-coating as a transparent conducting thin film. Electron. Mater. Lett. 7, 127–131 (2011). https://doi.org/10.1007/s13391-011-0607-8

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  • DOI: https://doi.org/10.1007/s13391-011-0607-8

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