Abstract
To elucidate the effects of the hydrogenation and oxygenation of the boron-doped diamond (BDD) electrode on its electrochemical behaviors, the surface morphologies and phases of the two surface-adsorption BDD films have been investigated and the cyclic voltammograms and AC impedance spectra have been measured at these two BDD electrodes. The results indicate that compared with the hydrogen-adsorption BDD film, oxygen-adsorption BDD film is less conductive, and has a larger surface roughness and a lower sp3/sp2 ratio. The oxygenated BDD film electrode possesses a wider electrochemical window, larger diamond film resistance and capacitance and a larger polarization resistance than hydrogenated BDD electrode. In addition, the effect mechanism of the surface-adsorption of BDD electrode on its electrochemical behaviors has been discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Geis M. W, Twichell J C. Electron field emission from diamond and other carbon materials after H2, O2, and Cs treatment. Appl Phys Lett, 1995, 67(9): 1328–1330
Cai R Q, Chen G H, Song X M, et al. Field electron emission of diamond films on nanocrystalline diamond coating by CVD method. Chin Sci Bull, 2003, 48(12): 1282–1285
Breskin A, Chechik R, Shefer E, et al. Absolute photoyield from chemical vapor-deposited diamond and diamond-like carbon films in the UV. Appl Phys Lett, 1997, 70(25): 3446–3348
Kondo T, Einaga Y, Sarada B V, et al. Homoepitaxial single-crystal boron-doped diamond electrodes for electroanalysis. J Electrochem Soc, 2002, 149: E179–E184
Ivandini T A, Sarada B V, Terashima C, et al. Electrochemical detection of tricyclic antidepressant drugs by HPLC using highly boron-doped diamond electrodes. J Electroanal Chem, 2002, 521(1–2): 117–126
Ferro S, Battisti A D, Dao I, et al. Chlorine evolution at highly boron-doped diamond electrodes. J Electrochem Soc, 2000, 147(7): 2614–2619
Hamza A V, Kubiak G D, Stulen R H. Hydrogen chemisorption and the structure of the diamond C(100)-(2×1) surface. Surf Sci, 1990, 237: 35
Phersson P E, Mercer T W. Oxidation of the hydrogenated diamond (100) surface. Surf Sci, 2000, 460(1–3): 49–66
Hayashi K, Yamanaka S, Watanabe H. Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films. J Appl Phys, 1997, 81(2): 744–753
Tryk D A, Tsunozaki K, Rao T N, et al. Relationships between surface character and electrochemical processes on diamond electrodes: dual roles of surface termination and near-surface hydrogen. Diamond Rel Mater, 2001, 10(9–10): 1804–1809
Ramesham R. Effect of annealing and hydrogen plasma treatment on the voltammetric and impedance behavior of the diamond electrode. Thin Solid Films, 1998, 315(1–2): 222–228
Simon N, Bullutaud D, Herlem M, et al. Influence of hydrogen plasma treatment on electrochemical behavior of moderately and highly boron doped diamond electrodes. Diamond Rel Mater, 2004, 13(4–8): 1050–1053
Garrido J A, Heimbeck T, Stutzmann M. Temperature-dependent transport properties of hydrogen-induced diamond surface conductive channels. Phys Rev B, 2005, 71(24): 245310–245317
de Theije F K, Reedijk M F, Arsic J, et al. Atomic structure of diamond {111} surfaces etched in oxygen water vapor. Phys Rev B, 2001, 64(8): 085403–085409
Pleskov Y V. Electrochemistry of diamond: A review. Russ J Electrochem, 2002, 38(12): 1275–1291
Hian L C, Grehan K J, Compton R G, et al. Influence of thin film properties on the electrochemical performance of diamond electrodes. Diamond Rel Mater, 2003, 12(3–7): 590–595
Zeng A, Liu E, Zhang S, et al. Impedance study on electrochemical characteristics of sputtered DLC films. Thin Solid Films, 2003, 426: 258–264
Granger M C, Xu J, Strojek J W, et al. Polycrystalline diamond electrodes: Basic properties and applications as amperometric detectors in flow injection analysis and liquid chromatography. Anal Chimica Acta, 1999, 397: 145–161
Yamanaka S, Takeuchi D, Watanabe H, et al. Electrical conduction of high-conductivity layers near the surfaces in hydrogenated homoepitaxial diamond films. Appl Surf Sci, 2000, 159–160: 567–571
Albin S, Watkins L. Electrical properties of hydrogenated diamond. Appl Phys Lett, 1990, 56(15): 1454–1456
Maier F, Ristein J, Mautel B, et al. Origin of surface conductivity in diamond. Phys Rev Lett, 2000, 85(16): 3472–3475
Maier F, Ristein J, Ley L. Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces. Phys Rev B, 2001, 64(16): 165411–165417
Rutter M J, Robertson J. Ab initio calculation of electron affinities of diamond surfaces. Phys Rev B, 1998, 57(15): 9241–9245
Baumann P K, Nemanich R J. Electron affinity and Schottky barrier height of metal-diamond (100), (111), (110) interfaces. J Appl Phys, 1998, 83(4): 2072–2082
Mott N F, Davis E A. Electronic Processes in Non-crystalline Materials. 2nd ed. Oxford: Clarendon Press, 1979
Author information
Authors and Affiliations
Corresponding author
About this article
Cite this article
Liu, F., Li, X., Wang, J. et al. Effects of the surface-adsorption of boron-doped diamond electrode on its electrochemical behavior. CHINESE SCI BULL 51, 1903–1908 (2006). https://doi.org/10.1007/s11434-006-2024-1
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11434-006-2024-1