Abstract:
The single crystal property of p+ type porous silicon is used to investigate the formation mechanisms of this material by in situ X-ray diffraction. During anodisation, the diffraction peak of the porous silicon layer exhibits a lattice parameter expansion, with the usual value. For long anodisation time, a parasitic chemical dissolution leads to a regular and homogeneous decrease of lattice mismatch, also observed during pure chemical dissolution.
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Received 20 November 2000
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Chamard, V., Pichat, C. & Dolino, G. Formation of porous silicon: an in situ investigation with high-resolution X-ray diffraction. Eur. Phys. J. B 21, 185–190 (2001). https://doi.org/10.1007/s100510170194
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DOI: https://doi.org/10.1007/s100510170194