Skip to main content

Advertisement

Log in

Anomalous behavior of the Fermi energy in heavily tin-doped InGaAs

  • Published:
The European Physical Journal B - Condensed Matter and Complex Systems Aims and scope Submit manuscript

Abstract:

We have measured the dependence of the Fermi energy on carrier concentration in Sn doped InGaAs at 4.2 K and 300 K. At 4.2 K the Fermi energy was measured by photoluminescence spectroscopy, and at 300 K it was deduced from transport measurements of thermionic emission. In both cases the dependence of the Fermi energy on the mobile electron concentration, measured by Hall effect, strongly deviates from standard theoretical predictions, and the deviation increases with concentration. The most striking observed anomaly is the near saturation of the Fermi level when the Hall concentration exceeds 1019 cm-3.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Author information

Authors and Affiliations

Authors

Additional information

Received 19 April 2001 and Received in final form 22 July 2001

Rights and permissions

Reprints and permissions

About this article

Cite this article

Tsukernik, A., Cheskis, D., Potashnik, O. et al. Anomalous behavior of the Fermi energy in heavily tin-doped InGaAs. Eur. Phys. J. B 23, 341–344 (2001). https://doi.org/10.1007/s100510170053

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s100510170053

Navigation