Abstract:
GaAs Schottky diodes, made on semi-insulating liquid encapsulated Czochralski grown material with concentrations of acceptor dopants varying from 1014 to 1017 cm-3, were investigated as alpha particle detectors. The charge collection efficiency (CCE) was found to decrease dramatically with increasing . Optical spectra in transmittance and reflectance were accurately measured to determine the concentrations of both neutral and ionised EL2 defects as a function of . The concentration of ionised EL2+ centres was shown to increase with , and to be quasi inversely proportional to the CCE values. This behaviour strongly supports the hypothesis that the EL2 defects play the main role in the compensation of the material and in limitation of the detection properties.
Similar content being viewed by others
Author information
Authors and Affiliations
Additional information
Received 21 March 2000
Rights and permissions
About this article
Cite this article
Ferrini, R., Guizzetti, G., Patrini, M. et al. Influence of acceptor impurities on semi-insulating GaAs particle detectors. Eur. Phys. J. B 16, 213–216 (2000). https://doi.org/10.1007/s100510070221
Issue Date:
DOI: https://doi.org/10.1007/s100510070221