Abstract
A thermochemical analysis was made of the oxidation, reduction, and volatilization reactions which occur in the Si-O-C system. One characteristic feature is the high SiO(g) and SiO(g) + CO(g) pressures at the Si(s)-SiO2 and SiC(s)-SiO2(s) interfaces. Active oxidation with weight losses and passive oxidation with weight gains were found on oxidizing Si(s) and SiC(s) in low oxygen pressures above 1000°C. Rapid oxidation was related to the SiO(g) and SiO(g) + C0(g) pressures at the Si(s) or SiC(s)-SiO2(s) interfaces.
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Gulbransen, E.A., Jansson, S.A. The high-temperature oxidation, reduction, and volatilization reactions of silicon and silicon carbide. Oxid Met 4, 181–201 (1972). https://doi.org/10.1007/BF00613092
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DOI: https://doi.org/10.1007/BF00613092