Abstract
The organic photodiodes (OPDs) have the advantages of rich functional material, controllable light-sensitive wavelength, low cost, and can be prepared on a flexible substrate, and has an important application prospect in the aspects of image sensing, immune detection, optical communication. Near infrared (NIR) optical devices can be fabricated mainly by using narrow energy gap materials and organic near infrared dye doping. Metal phthalocyanine, metal naphtalocyanine/fullerene C60 planar heterojunctions (PHJs) were often used as the active layer of NIR OPD. In this paper, NIR OPD based on SnNc as near infrared photosensitive layer were studied, because of its excellent absorption efficiency in NIR region. Bi-layer SnNc/C60 PHJ based OPD exhibited a large dark current, resulting a low photosensitivity. To reduce the dark current of the device, CuPc was introduced as electron blocking layer in the device, and tri-layer CuPc/SnNc/C60 PHJ based OPD was studied. The device shows improved performance, such as a low dark current, a large photoresponsivity, photosensitivity, the external quantum efficiency and the specific detectivity. The improved performance of device can be attributed to the enhanced electron injection barrier at the interface of anode and CuPc electron blocking layer.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Källhammer JE (2006) Imaging: the road ahead for car night-vision. Nature Photonics, pp 12–13
Gao XH, Cui XY, Levenson RM, Chung LWK, Nie S (2004) In vivo cancer targeting and imaging with semiconductor quantum dots. Nat Biotechnol 22(8):969–976
Peng YQ, Lv LW, Yao B, Fan GY, Chen DQ, Gao PJ, Zhou MQ, Wang Y (2013) High performance near infrared photosensitive organic field-effect transistors realized by an organic hybrid planar-bulk heterojunction. Org Electron 14(4):1045–1051
Kim DY, Sarasqueta G, So F (2009) SnPc:C60 bulk heterojunction organic photovoltaic cells with MoO3 interlayer. Sol Energy Mater Sol Cells 93(8):1452–1456
Rand BP, Xue J, Yang F, Forrest SR (2005) Organic solar cells with sensitivity extending into the near infrared. Appl Phys Lett 87(23):233508
Kim DY, Song DW, Chopra N, Somer PD, So F (2010) Organic infrared upconversion device. Adv Mater 22(20):2260–2263
Liang YL, Lv WL, Luo X, He L, Xu K, Zhao F, Huang FB, Lu FP, Peng YQ (2018) A comprehensive investigation of organic active layer structures toward high performance near-infrared phototransistors. Synth Met 240:44–51
Kao PC, Chu SY, Huang HH, Tseng ZL, Chen YC (2009) Improved efficiency of organic photovoltaic cells using tris (8-hydroxy-quinoline) aluminum as a doping material. Thin Solid Films 517(17):5301–5304
Takanashi Y, Takahata K, Muramoto Y (1999) Characteristics of InAlAs/InGaAs highelectron-mobility transistors under illumination with modulated light. IEEE Trans Electron Devices 46(12):2271–2277
Rauch T, Bǒerl M, Tedde SF, Fürst J, Kovalenko MV, Hesser G, Lemmer U, Heiss W, Hayden O (2009) Near-infrared imaging with quantum-dot-sensitized organic photodiodes. Nat Photonics 3(6):332–336
Wang X, Li H, Su Z, Fang F, Zhang G, Wang J, Chu B, Fang H, Wei Z, Li B, Li W (2014) Efficient organic near-infrared photodetectors based on lead phthalocyanine/C60 heterojunction. Org Electron 15(10):2367–2371
Acknowledgements
This work was supported by the Zhejiang Provincial Natural Science Foundation of China Grant No. LQ19F040003.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2021 The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Song, X., Lv, W. (2021). Organic Near Infrared Photodiode Based on Tin Naphtalocyanine as Sensitive Layer. In: Peng, Y., Dong, X. (eds) Proceedings of 2019 International Conference on Optoelectronics and Measurement. Lecture Notes in Electrical Engineering, vol 726. Springer, Singapore. https://doi.org/10.1007/978-981-33-4110-4_7
Download citation
DOI: https://doi.org/10.1007/978-981-33-4110-4_7
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-33-4109-8
Online ISBN: 978-981-33-4110-4
eBook Packages: EngineeringEngineering (R0)