Abstract
In recent years a major effort has been put into achieving integration of functional materials into semiconductor technology. Among functional materials ferroelectrics are an important class of materials, exhibiting a large spectrum of properties and effects including the piezoelectric effect, pyroelectric effect, electro-optic effect, spontaneous polarization, etc. Ferroelectrics are attractive for many applications, the most important being ferroelectric non-volatile random access memories (FERAMs) and micro-electromechanical mechanical system (MEMS) devices. For these specific applications, but also desirable for most other envisaged applications of ferroelectric materials, direct integration of ferroelectrics with silicon or other semiconductors of technological potential would be highly desirable. Beside the memory effect, the photoelectric and pyroelectric effects in ferroelectricsemiconductor heterostructures [1,2] could be promising for developing new types of integrated detectors.
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References
Chen CJ, Wu ET, Xu YH, Chen KC, MacKenzie JD (1990) Sol-gel derived ferroelectric PZT thin films on doped silicon substrates. Ferroelectrics 112: 321–7
Pintilie L, Alexe M, Pintilie I, Botila T (1996) Photovoltaic effect in PbS/PbTiO3/Si heterostructures. Appl. Phys. Lett 69: 1571–3
Scott JF, Paz de Araujo CA (1989) Ferroelectric memories. Science 246: 1400
Sumi T, Moriwaki N, Nakane G, Nakakuma T, Judai Y, Uemoto Y, Nagano Y, Hayashi S, Azuma M, Otsuki T, Kano G, Cuchiaro JD, Scott MC, McMillan LD, Paz de Araujo CA (1995) 256 Kb ferroelectric nonvolatile memory technology for 1T/1C cell with 100 ns read/write time at 3 V. Integrated Ferroelectrics 6: 1
Eaton SS, US Pat No 4, 873, 664 (1989)
Wu SY (1974), IEEE Trans Electron Dev ED-21:499
Rabson TA, Rost TA, Lin H (1995) Ferroelectric gate transistors. Integrated Ferroelectries 6: 15
Tokumitsu E, Nakamura R, Ishiwara H (1997) Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures. IEEE Electron Dev Lett 18: 160
Kalkur TS, Jacobs B, Argos G (1994) Characteristics of ferroelectric gate MOS and MOSFETs. Integrated Ferroelectrics 5: 177
Scott JF (1998), Ferroelectric Memories, Springer Verlag
Auciello O, Kingon AI (1992) A critical review of physical vapor deposition techniques for the synthesis of ferroelectric thin films. Proc 8th IEEE Int Sympos on Applications of Ferroelectrics (Cat No92CH3080–9) IEEE, pp 320–31 New York, USA
Li SH, Miller RO (1999) Chemical Mechanical Polishing in Silicon Processing. Academic Press, Boston
Runnels SR, Eyman LM (1994) Tribology analysis of chemical-mechanical polishing. J Electrochem Soc 141: 1698
Alexe M, Hesse D, Gösele U (1998) Deposition and processing of bismuth titanate thin films for direct wafer bonding. Mater Chem and Phys 55: 55–60
Tomozawa M (1997) Oxide CMP mechanisms. Solid State Technology 40: 169
Alexe M, Senz S, Pignolet S, Hesse D, Gösele U (1999) Direct wafer bonding and layer transfer for ferroelectric thin film integration. Integrated Ferroelectrics 27: 205
Alexe M (1998) Measurement of interface trap states in metal—ferroelectric—silicon heterostructures. Appl Phys Lett 72: 2283
Nicollian EH, Brews JR (1982) MOS Physics and Technology. John Wiley, New York
Alexe M, Senz S, Pignolet A, Hesse D, Gösele U (1999) Structural and electrical properties of metal—ferroelectric—silicon heterostructure fabricated by a direct wafer bonding and layer transfer process. Ferroelectrics 225: 75–82
Massoud HZ (1997) Device physics and simulation of metal/ferroelectric-film/p-type silicon capacitors. Microelectronic Engineering 36: 95
Grove AS (1967) Physics and Technology of Semiconductor Devices. John Wiley, New York
Alexe M, Senz S, Pignolet A, Hesse D, Gösele U (1999) Direct wafer bonding and layer transfer — a new approach to integration of ferroelectric oxides into silicon technology. Ferroelectrics 231: 169
Alexe M, Senz S, Scott JF, Pignolet A, Hesse D, Gösele U (1998) Direct wafer bonding and layer transfer: an innovative way for the integration of ferroelectric oxides into silicon technology. Mater Res Soc Symp Proc 493: 517
Hu C (1994) SOI (silicon-on-insulator) for high-speed ultra-large-scale integration. Japn J Appl Phys Part 1 33: 365–9
Bruel M (1995) Silicon-on-insulator material technology. Electron Lett 31: 1201
Tong Q-Y, Gösele U (1999) Wafer bonding and layer splitting for microsystems. Adv Mater 11: 1404
Alexe M, Dragoi V, Reiche M, Gösele U (2000) Low temperature GaAs/Si direct wafer bonding. Electronics Letters 36: 675–677
Hung LJ, Tong Q-Y, Gösele U (1999) Hydrogen-implantation induced blistering and layer transfer of LaA1O/sub 3/ and sapphire. Electrochemical Solid-State Lett 2: 238
Radu I, Szafraniak I, Scholz R, Alexe M, Gösele U (2002) Ferroelectric oxide single-crystalline layers by wafer bonding and hydrogen/helium implantation. Mater Res Soc Symp Proc 748: U1181–6
Ruglovsky JL, Park YB, Ryan CB, Atwater HA (2002) Wafer bonding and layer transfer for thin film ferroelectrics. Mat Res Soc Symp Proc 748: U1171–6
Watton R (1989) Ferroelectric materials and devices in infrared detection and imaging. Ferroelectrics 91: 87
Patel A, Shorrocks NM, Whatmore RW (1992) Lead scandium tantalate thin films for thermal detectors. In: Ferroelectric Thin Films II Symposium. Mater Res Soc Symp Proc 243: 67–72
Scott JF (1997) Ferroelectric memories. Ferroelectrics Rev 1: 1
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Alexe, M., Radu, I., Szafraniak, I. (2004). Wafer Bonding of Ferroelectric Materials. In: Alexe, M., Gösele, U. (eds) Wafer Bonding. Springer Series in MATERIALS SCIENCE, vol 75. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-10827-7_13
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DOI: https://doi.org/10.1007/978-3-662-10827-7_13
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