Abstract
The inter diffusion of Cu-In bilayers is studied by the resistometric method. In each case one of the films is at least 8 times thicker than the other, and the total thickness is in the order of 140 nm. The difussion of Cu in In lowers the resistance and the diffusion of In in Cu raises it. The diffusion constant, at 295 K, is calculated by means of a simple model of the diffusion of a thin layer of material deposited on a thicker film. From the results it is concluded that the dominant mechanism is grain boundary diffusion.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
D. Gupta — In Diffusion Defect Data. Solid State Data A Defect Diffusion Forum A59. 137 (1988).
R. P. Volkova, L. S. Palatnik and A. T. Pugachev — Sov. Phys. Dokl. 26, 695 (1981).
CRC Handbook of Chemistry and Physics — CRC PRESS, Inc. Florida (1979).
S. Ceresara, T. Federighi and F. Pieragostini — Phys. Stat. Sol 16 439 (1966).
B. S. Bokshtein — Difusión en Metales. Scc.5 — Edit. MIR (1978).
A. Wagendristel — Phys. Stat. Sol.(a) 13 131 (1975).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1992 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Clark, N., Azofeifa, D.E. (1992). Interdiffusion of Cu-In Films Studied by the Resistometric Method. In: Ponce, F.A., Cardona, M. (eds) Surface Science. Springer Proceedings in Physics, vol 62. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-76376-2_46
Download citation
DOI: https://doi.org/10.1007/978-3-642-76376-2_46
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-76378-6
Online ISBN: 978-3-642-76376-2
eBook Packages: Springer Book Archive