Abstract
Silicon is the basic material which makes the functions of semiconductors possible. Most of the conveniences we take for granted would simply not have existed without this essential resource. The need for more and more complex devices increases the size of the device and the requirements on the quality of the material. Crystal quality will therefore be of utmost importance in the coming years as these trends continue to decrease the tolerance on wafer specifications. We present a mathematical model and numerical simulations which help to design the growth process in order to improve the crystal quality. A macroscopic model for heat transfer is therefore combined with a microscopic model for intrinsic point defect diffusion
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© 2002 Springer-Verlag Berlin Heidelberg
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Voigt, A., Nitschkowski, J., Weichmann, C., Hoffmann, K.H. (2002). Controlling Point Defects in Single Silicon Crystals Grown by the Czochralski Method. In: Breuer, M., Durst, F., Zenger, C. (eds) High Performance Scientific And Engineering Computing. Lecture Notes in Computational Science and Engineering, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-55919-8_25
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DOI: https://doi.org/10.1007/978-3-642-55919-8_25
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-42946-3
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