Abstract
In this paper, a simple and fast TSV (Through Silicon Via) fabrication error detection method is proposed for 3-D IC applications. The DUTs are EM-modeled for the capacitive probes and TSVs with fabrication errors of a crack, a pin-hole, and a micro-void. The large probe can measure multiple TSVs, simultaneously. From the post-processing of the measured data, the capability of error detection is verified for error cognition, the size and the number of errors.
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Acknowledgements
This research was supported by the MOTIE and KSRC support program for the development of the future semiconductor device, Soonchunhyang University research fund, and the MSIT, Korea, under the ITRC support program (IITP-2018-2015-0-00403) supervised by the IITP.
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Han, SM., Kim, Y., Ahn, JH. (2020). Multi-TSV (Through Silicon Via) Error Detection Using the Non-contact Probing Method. In: Lee, R. (eds) Applied Computing and Information Technology. ACIT 2019. Studies in Computational Intelligence, vol 847. Springer, Cham. https://doi.org/10.1007/978-3-030-25217-5_4
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DOI: https://doi.org/10.1007/978-3-030-25217-5_4
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