Abstract
Dosimetric characteristics of a metal oxide–silicon semiconductor field effect transistor (MOSFET) detector are studied with megavoltage photon beams for patient dose verification. The major advantages of this detector are its size, which makes it a point dosimeter, and its ease of use. In order to use the MOSFET detector for dose verification of intensity-modulated radiation therapy (IMRT) and in-vivo dosimetry for radiation therapy, we need to evaluate the dosimetric properties of the MOSFET detector. Therefore, we investigated the reproducibility, dose-rate effect, accumulated-dose effect, angular dependence, and accuracy in tissue-maximum ratio measurements. Then, as it takes about 20 min in actual IMRT for the patient, we evaluated fading effect of MOSFET response. When the MOSFETs were read-out 20 min after irradiation, we observed a fading effect of 0.9% with 0.9% standard error of the mean. Further, we applied the MOSFET to the measurement of small field total scatter factor. The MOSFET for dose measurements of small field sizes was better than the reference pinpoint chamber with vertical direction. In conclusion, we assessed the accuracy, reliability, and usefulness of the MOSFET detector in clinical applications such as pinpoint absolute dosimetry for small fields.
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Acknowledgments
The authors wish to thank Yu Igarashi, AcroBio Corporation, for his useful discussion of and comments on this work. We are extremely grateful to the reviewer and editors for their prompt responses and also assisting us in improving this manuscript extensively by even providing a very useful tutorial guide on some details involved in this study.
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Kohno, R., Hirano, E., Nishio, T. et al. Dosimetric evaluation of a MOSFET detector for clinical application in photon therapy. Radiol Phys Technol 1, 55–61 (2008). https://doi.org/10.1007/s12194-007-0007-9
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DOI: https://doi.org/10.1007/s12194-007-0007-9