Abstract
Photoelectrochemical etching of GaN, using a KOH solution and a 325 nm wavelength UV laser, has been used to obtain carrier concentration depth profiles. The photoelectrochemical capacitance-voltage measurements are supported with conventional depletion mode capacitance-voltage, secondary ion mass spectroscopy, and Hall measurements. The data show that steps in carrier concentration profiles can be accurately reproduced.
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S.J. Pearton, C.R. Abernathy, F. Ren, J.R. Lothian, P.W. Wisk and A. Katz, J. Vac. Sci. Technol. A 11, 1772 (1993).
M.S. Minsky, M. White and E.L. Hu, Appl. Phys. Lett. 68, 1531 (1996).
Hongqiang Lu, Ziming Wu and Ishwara Bhat, J. Electrochem. Soc. 144, L8 (1997).
Shyam S. Kocha, Mark W. Peterson, Douglas J. Arent, Joan M. Redwing, Michael Tischler and John A. Turner, J. Electrochem. Soc. 142, L238 (1995).
P. Blood, Semicond. Sci. Technol. 1, 7 (1986).
S. Roy Morrison, Electrochemistry at Semiconductor and Oxidized Metal Electrodes, (New York: Plenum Press, 1980), p. 164.
Sergei Ruvimov, Zuzanna Lilliental-Weber, Tadeusz Suski, Joel W. Ager III, Jack Washburn, Joachim Krueger, Christian Kisielowski, Eicke R. Weber, H. Amano and I. Akasaki, Appl. Phys. Lett. 69, 990 (1996).
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Stutz, C.E., Mack, M., Bremser, M.D. et al. Photoelectrochemical Capacitance-Voltage Measurements in GaN. J. Electron. Mater. 27, L26–L28 (1998). https://doi.org/10.1007/s11664-998-0182-4
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DOI: https://doi.org/10.1007/s11664-998-0182-4