Abstract
This study investigates the electromigration (EM) effect under a high current density (104 A/cm2) on the different interfacial compound phases at Sn(Cu) solder/electroless nickel immersion gold (ENIG) interfaces. The interfacial Ni3Sn4 phase at the Sn-0.7 wt.%Cu/ENIG joint interface was quickly depleted after a short period (50 h) of current stressing. The inference drawn is that the Ni atoms in the Ni3Sn4 phase at the joint interface are likely forced out under current stressing; however, the ternary (Cu,Ni)6Sn5 compound effectively reduces the EM-driven Ni flux into the Sn bump; thus, a significantly lower Ni(P) consumption was observed at the Sn-1 wt.%Cu/ENIG interface. The EM-induced Ni(P) dissolution rates in the Sn-0.2 wt.%Cu/ENIG and Sn-1 wt.%Cu/ENIG cases were calculated to be 0.028 μm/h and 0.018 μm/h, respectively. In addition, significant EM-assisted Ni3P formation was observed for the current-stressed Sn-0.2 wt.%Cu/ENIG and Sn-0.7 wt.%Cu/ENIG cases; however, for the Sn-1 wt.%Cu/ENIG case, formation of a Ni3P layer was scarcely observed. Moreover, the initial (Cu,Ni)6Sn5 that formed at the interface appeared compact with a layer-type structure, which reduced the EM-driven Ni diffusion.
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References
Y.C. Lin, J.G. Duh, and B.S. Chiou, J. Electron. Mater. 35, 7 (2006).
T.S. Huang, H.W. Tseng, C.T. Lu, Y.H. Hsiao, Y.C. Chuang, and C.Y. Liu, J. Electron. Mater. 39, 11 (2010).
C.E. Ho, Y.W. Lin, S.C. Yang, C.R. Kao, and D.S. Jiang, J. Electron. Mater. 35, 1017 (2006).
C.E. Ho, S.C. Yang, and C.R. Kao, J. Mater. Sci. Mater. Electron. 18, 155 (2007).
C.Y. Liu, K.N. Tu, T.T. Sheng, C.H. Tung, D.R. Frear, and P. Elenius, J. Appl. Phys. 87, 750 (2000).
K. Zeng and K.N. Tu, Mater. Sci. Eng. R 38, 55 (2002).
G.Y. Yang, J.G. Duh, H. Takahashi, S.W. Lu, and J.C. Chen, J. Electron. Mater. 35, 1745 (2006).
T.Y. Lee and K.N. Tu, J. Appl. Phys. 90, 4502 (2001).
H. Gan and K.N. Tu, J. Appl. Phys. 97, 63514 (2005).
T. Laurila, V. Vuorinen, and J.K. Kivilahti, Mater. Sci. Eng. R 49 (2005).
S.J. Wang and C.Y. Liu, J. Electron. Mater. 32, 1303 (2003).
S.J. Wang and C.Y. Liu, Scripta Mater. 55, 347 (2006).
Y.C. Lin and J.G. Duh, Scripta Mater. 54, 1661 (2006).
D. Kim and J. Jungho Pak, J. Mater. Sci. Mater. Electron. 21, 12 (2010).
R. Zhang, F. Guo, J. Liu, H. Shen, and F. Tai, J. Electron. Mater. 38, 2 (2009).
Y.H. Hsiao, H.W. Tseng, and C.Y. Liu, J. Electron. Mater. 38, 12 (2009).
H.W. Tseng, C.T. Lu, Y.H. Hsiao, P.L. Liao, Y.C. Chuang, T.Y. Chung, and C.Y. Liu, Microelectron. Reliab. 50, 1159 (2010).
Y.H. Hsiao, Y.C. Chuang, and C.Y. Liu, Scripta Mater. 54, 661 (2006).
K.C. Hung, Y.C. Chan, C.W. Tang, and H.C. Ong, J. Mater. Res. 15, 11 (2000).
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Wu, S., Hu, Y., Lu, C. et al. Electromigration Study on Sn(Cu) Solder/Ni(P) Joint Interfaces. J. Electron. Mater. 41, 3342–3347 (2012). https://doi.org/10.1007/s11664-012-2301-5
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DOI: https://doi.org/10.1007/s11664-012-2301-5