Abstract
Ni underbump metallization (UBM) has been widely used as the diffusion barrier between solder and Cu pads. To retard the fast dissolution rate of Ni UBM, Cu was added into Ni thin films. The Ni-Cu UBM can provide extra Cu to the solders to maintain the Cu6Sn5 intermetallic compound (IMC) at the interface, which can thus significantly decrease the Ni dissolution rate. In this study, the Cu content of the sputtered Cu/Ni-xCu/Ti UBM was varied from 0 wt.% to 20 wt.%. Sn-3Ag-0.5Cu solder was reflowed with Cu/Ni-Cu/Ti UBM one, three, and five times. Reflow and cooling conditions altered the morphology of the IMCs formed at the interface. The amount of (Cu,Ni)6Sn5 increased with increasing Cu content in the Ni-Cu film. The Cu concentration of the intermetallic compound was strongly dependent on the composition of the Ni-Cu films. The results of this study suggest that Cu-rich Ni-xCu UBM can be used to suppress interfacial spalling and improve shear strength and pull strength of solder joints.
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This work is financially supported by the National Science Council, Taiwan, under Contract NSC-97-2811-E-007-022.
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Peng, CN., Duh, JG. Reaction Mechanism and Mechanical Properties of the Flip-Chip Sn-3.0Ag-0.5Cu Solder Bump with Cu/Ni-xCu/Ti Underbump Metallization After Various Reflows. J. Electron. Mater. 38, 2543–2553 (2009). https://doi.org/10.1007/s11664-009-0943-8
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DOI: https://doi.org/10.1007/s11664-009-0943-8