Abstract
In this paper, an analysis on the electrostatic actuation in capacitive complementary metal-oxide semiconductor and micro-electro-mechanical systems (CMOS–MEMS) inertial sensors is presented. These sensors are designed to be used in combination with a floating gate metal oxide semiconductor field-effect transistor as the transducer to convert inertial force to an electrical signal. The effects of connecting micro-sensors with different geometry and having the same mechanic characteristics and integrated electronics for transducing are analyzed. It is shown that the performance of these capacitive structures depends mainly on features like the mechanical properties of the material used and the mechanical behavior given by the geometry. Undesired effects like pitch, roll and yaw movements depend on the geometry and the configuration of the proposed capacitive structure. Also, the biasing of the transducer included in the system affects the electrostatic actuation of the inertial sensor. This study shows that some geometric designs of this kind of sensors may result unreliable for a good transduction when an external force is applied. Furthermore, the proposed design can be fabricated using standard CMOS technologies followed by a sacrificial layer surface micromachining needed for the structure release.
Similar content being viewed by others
References
Andò B et al (2011) A BE-SOI MEMS for inertial measurement in geophysical applications. IEEE Trans Instrum Meas 60(5):1901–1908
Bao M (2005) Analysis and design principles of MEMS devices. Elsevier, Beijing
Hsu HJ, Huang JT, Lee KY, Tsai TC (2012) Development of UV-Liga contact probe. 7th International microsystems, packaging, assembly and circuits technology conference. Taipei: IEEE, pp 183–188
Kaajakari V (2009) Practical MEMS. Small Gear, Las Vegas
Khan F, Zhu Y, Lu J, Dao D (2013) Design of metal MUMPS based LLC resonant converter for on-chip power supplies. IEEE 8th conference on industrial electronics and applications, IEEE, pp 700–704
Lazarus N, Bedair S, Lo C, Fedder G (2010) CMOS–MEMS capacitive humidity sensor. J Microelectromech Syst 19(1):183–191
Mukherjee B, Swamy K, Kar S, Sen S (2011) Effect of voltage induced electrostatic forces on MEMS capacitive accelerometer. IEEE Students Technology Symposium IEEE, pp 253–258
Mukherjee B, Swamy K, Sen S (2012) A new approach for sensitivity improvement of MEMS capacitive accelerometer using electrostatic actuation. 6th International conference on sensing technology, pp 738–742
Sethuramalingam T, Vilmalajuliet A (2010) Design of MEMS based capacitive accelerometer. International conference on mechanical and electrical technology Singapore: IEEE, pp 565–568
Conflict of interest
The authors declare that they have no conflict of interest.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Abarca Jiménez, G.S., Reyes Barranca, M.A., Mendoza Acevedo, S. et al. Design considerations and electro-mechanical simulation of an inertial sensor based on a floating gate metal-oxide semiconductor field-effect transistor as transducer. Microsyst Technol 21, 1353–1362 (2015). https://doi.org/10.1007/s00542-014-2274-9
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00542-014-2274-9