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Preparation and characterization of ultra-thin cobalt silicide for VLSI applications

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Abstract

Ultra-thin cobalt silicide (CoSi2) was formed from 10 nm cobalt film by solid phase reaction of Co and Si by use of rapid thermal annealing (RTA). The Ge+ ion implantation through Co film caused the interface mixing of the cobalt film with the silicon substrate and resulted in a homogeneous silicide layer. XRD was used to identify the silicide phases that were present in the film. The metallurgical analysis was performed by RBS. XRD and RBS investigations showed that final RTA temperature should not exceed 800°C for thin (< 50 nm) CoSi2 formation.

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Authors and Affiliations

  1. Microelectronics Centre, Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, 721 302, Kharagpur, India

    S Kal, I Kasko & H Ryssel

  2. Lehrstuhl fur Elektronische Bauelemente, Universitat Erlangen-Nurnberg, Cauerstrasse 6, D-91058, Erlangen, Germany

    I Kasko & H Ryssel

Authors
  1. S Kal
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  2. I Kasko
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  3. H Ryssel
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Kal, S., Kasko, I. & Ryssel, H. Preparation and characterization of ultra-thin cobalt silicide for VLSI applications. Bull. Mater. Sci. 18, 531–539 (1995). https://doi.org/10.1007/BF02744838

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  • DOI: https://doi.org/10.1007/BF02744838

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